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IRLML2502TRPBF
+物料清單MOSFET N-CH 20V 4.2A SOT23
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製造商英飛淩科技
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製造商部分 #IRLML2502TRPBF
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規格
| 屬性 | 價值 |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| Base Product Number | IRLML2502 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 15 V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Equivalent
- SI2302DS (Vishay)
- DMN1019USN (Diodes Inc.)
- 2N7002DW (ON Semiconductor)
- BSS138 (NXP/Infineon) – lower current rating but common substitute.
Check datasheets for exact specs like Vgs, Rds(on), and current ratings to ensure compatibility.
Features
- Voltage Rating: 20V (VDSS)
- Current Rating: 4.3A (ID)
- Low On-Resistance: 45mΩ (RDS(on) at VGS = 4.5V)
- Low Gate Drive Voltage: 1.8V (VGS(th))
- Fast Switching: Optimized for high-speed applications
- Power Dissipation: 1.3W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
- Logic-Level Compatible: Fully enhanced at 2.5V
- Low Gate Charge (Qg): 8.5nC (Typ.)
Ideal for battery-powered circuits, load switching, and DC-DC converters due to its efficiency and small footprint.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-side).
3. Source (S) – Ground/reference terminal.
Key Features:
- Low threshold voltage (logic-level compatible).
- 30V drain-source voltage (VDS).
- 4.2A continuous drain current (ID).
- Low on-resistance (RDS(on)GS).
Commonly used in power switching, DC-DC converters, and load control in portable electronics.
Application
- Low-voltage switching (e.g., power management in portable devices).
- Load switching (battery protection, power distribution).
- DC-DC converters (efficient voltage regulation).
- Signal switching (amplifiers, logic circuits).
- Consumer electronics (smartphones, tablets, wearables).
Its compact SOT-23 package and low VGS(th) make it ideal for space-constrained, low-power applications.
Package
Frequently Asked Questions
Q: What is the maximum drain current for the IRLML2502TRPBF at 25°C?
A: The continuous drain current (Id) is rated at 4.2A (Ta) at 25°C ambient temperature.
Q: What is the typical gate threshold voltage for this N-Channel MOSFET?
A: The maximum Vgs(th) is 1.2V at 250μA drain current, ensuring low-voltage drive compatibility.
Q: Can this MOSFET be driven with a 2.5V logic level?
A: Yes, the drive voltage range is 2.5V to 4.5V, with 45mOhm max Rds(on) at 4.2A and 4.5V.
Q: What is the power dissipation limit of the IRLML2502TRPBF?
A: The maximum power dissipation (Pd) is 1.25W at ambient temperature (Ta), suitable for low-power designs.
Q: What is the package type for this device?
A: It comes in a Micro3/SOT-23 surface-mount package, specifically TO-236-3, SC-59, or SOT-23-3.
Q: What is the input capacitance at a 15V drain-source voltage?
A: The maximum input capacitance (Ciss) is 740pF at Vds = 15V, which aids in switching speed estimation.
Q: What is the operating temperature range for this MOSFET?
A: The junction temperature (TJ) range is -55°C to +150°C, supporting harsh environment applications.
