IRGIB15B60KD1P vs IRGIB6B60KDPBF

對 IRGIB15B60KD1P 和 IRGIB6B60KDPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRGIB15B60KD1P IRGIB6B60KDPBF
Supplier Rochester Electronics, LLC,Infineon Technologies Infineon Technologies
Part Status Obsolete Obsolete
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown(Max) 600 V 600 V
Current - Collector(Ic)(Max) 19 A 11 A
Current - Collector Pulsed(Icm) 38 A 22 A
Vce(on)(Max) @ Vge Ic 2.2V @ 15V, 15A 2.2V @ 15V, 5A
Power - Max 52 W 38 W
Switching Energy 127µJ (on), 334µJ (off) 110µJ (on), 135µJ (off)
Input Type Standard Standard
Gate Charge 56 nC 18.2 nC
Td(on / off) @ 25°C 30ns/173ns 25ns/215ns
Test Condition 400V, 15A, 22Ohm, 15V 400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr) 67 ns 70 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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