IRGIB15B60KD1P vs IRGIB4610DPBF

對 IRGIB15B60KD1P 和 IRGIB4610DPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRGIB15B60KD1P IRGIB4610DPBF
Supplier Rochester Electronics, LLC,Infineon Technologies Infineon Technologies
Part Status Obsolete Obsolete
Voltage - Collector Emitter Breakdown(Max) 600 V 600 V
Current - Collector(Ic)(Max) 19 A 10 A
Switching Energy 127µJ (on), 334µJ (off) 122µJ (on), 56µJ (off)
Input Type Standard Standard
Mounting Type Through Hole Through Hole
IGBT Type NPT -
Current - Collector Pulsed(Icm) 38 A -
Vce(on)(Max) @ Vge Ic 2.2V @ 15V, 15A -
Power - Max 52 W -
Gate Charge 56 nC -
Td(on / off) @ 25°C 30ns/173ns -
Test Condition 400V, 15A, 22Ohm, 15V -
Reverse Recovery Time (trr) 67 ns -
Operating Temperature -55°C ~ 175°C (TJ) -
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