IRFP4368PBF vs IRFP4332PBF

對 IRFP4368PBF 和 IRFP4332PBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification IRFP4368PBF IRFP4332PBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 250 V
Current - Continuous Drain(Id) @ 25°C 195A (Tc) 57A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 1.85mOhm @ 195A, 10V 33mOhm @ 35A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 570 nC @ 10 V 150 nC @ 10 V
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 19230 pF @ 50 V 5860 pF @ 25 V
Power Dissipation (Max) 520W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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