IRFP4229PBF vs IRFP4368PBF

對 IRFP4229PBF 和 IRFP4368PBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification IRFP4229PBF IRFP4368PBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 75 V
Current - Continuous Drain(Id) @ 25°C 44A (Tc) 195A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 46mOhm @ 26A, 10V 1.85mOhm @ 195A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V 570 nC @ 10 V
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4560 pF @ 25 V 19230 pF @ 50 V
Power Dissipation (Max) 310W (Tc) 520W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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