IRF7821TRPBF vs IRF7853TRPBF
對 IRF7853TRPBF 和 IRF7821TRPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
SOIC-8
描述
MOSFET N-CH 100V 8.3A 8SO
MOSFET N-CH 30V 13.6A 8SO
Series
HEXFET®
HEXFET®
Part Status
Active
-
Base Product Number
IRF7853
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
-
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
10V
-
Rds On (Max) @ Id, Vgs
18mOhm @ 8.3A, 10V
-
Vgs(th) (Max) @ Id
4.9V @ 100µA
-
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 25 V
-
Power Dissipation (Max)
2.5W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
30 V
Current-ContinuousDrain(Id)@25°C
-
13.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
-
4.5V, 10V
RdsOn(Max)@IdVgs
-
9.1mOhm @ 13A, 10V
Vgs(th)(Max)@Id
-
1V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
14 nC @ 4.5 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
1010 pF @ 15 V
PowerDissipation(Max)
-
2.5W (Ta)
OperatingTemperature
-
-55°C ~ 155°C (TJ)
MountingType
-
Surface Mount
