Part A
FGH60N60SFDTU
安森美
- Lifecycle
- Active
- Stock
- 3091 件
- Package
- TO-247AB-3
- Series
- 電晶體-IGBT-單
對 FGH60N60SFDTU 和 FGH60N60SMD 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
安森美
安森美
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | FGH60N60SFDTU | FGH60N60SMD |
|---|---|---|
| Part Status | Active | Active |
| IGBT Type | Field Stop | Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 600 V | 600 V |
| Current - Collector(Ic)(Max) | 120 A | 120 A |
| Current - Collector Pulsed(Icm) | 180 A | 180 A |
| Vce(on)(Max) @ Vge Ic | 2.9V @ 15V, 60A | 2.5V @ 15V, 60A |
| Power - Max | 378 W | 600 W |
| Switching Energy | 1.79mJ (on), 670µJ (off) | 1.26mJ (on), 450µJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 198 nC | 189 nC |
| Td(on / off) @ 25°C | 22ns/134ns | 18ns/104ns |
| Test Condition | 400V, 60A, 5Ohm, 15V | 400V, 60A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 47 ns | 39 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |