FGH60N60SFDTU vs FGH60N6S2

對 FGH60N60SFDTU 和 FGH60N6S2 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FGH60N60SFDTU FGH60N6S2
Supplier - onsemi
Part Status Active Obsolete
Voltage - Collector Emitter Breakdown(Max) 600 V 600 V
Current - Collector(Ic)(Max) 120 A 75 A
Current - Collector Pulsed(Icm) 180 A 320 A
Vce(on)(Max) @ Vge Ic 2.9V @ 15V, 60A 2.5V @ 15V, 40A
Power - Max 378 W 625 W
Switching Energy 1.79mJ (on), 670µJ (off) 400µJ (on), 310µJ (off)
Input Type Standard Standard
Gate Charge 198 nC 140 nC
Td(on / off) @ 25°C 22ns/134ns 18ns/70ns
Test Condition 400V, 60A, 5Ohm, 15V 390V, 40A, 3Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
IGBT Type Field Stop -
Reverse Recovery Time (trr) 47 ns -
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