Part A
FDS6930B
安森美
- Lifecycle
- Active
- Stock
- 16996 件
- Package
- SOIC-8
- Series
- 電晶體-FET、MOSFET-陣列
對 FDS6930B 和 FDS6982AS_G 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | FDS6930B | FDS6982AS_G |
|---|---|---|
| Supplier | onsemi,Rochester Electronics, LLC | onsemi |
| Series | PowerTrench® | PowerTrench®, SyncFET™ |
| Part Status | Active | Obsolete |
| FET Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Standard |
| Drain to Source Voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 5.5A | 6.3A, 8.6A |
| Rds On(Max) @ Id Vgs | 38mOhm @ 5.5A, 10V | 28mOhm @ 6.3A, 10V, 13.5mOhm @ 8.6A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 3V @ 250µA, 3V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 3.8nC @ 5V | 9nC @ 5V, 16nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 412pF @ 15V | 610pF @ 10V, 1250pF @ 10V |
| Power - Max | 900mW | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |