規格
| 屬性 | 價值 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 5.5A |
| RdsOn(Max)@IdVgs | 38mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.8nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 412pF @ 15V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
"Introduction to FDS6930B" likely refers to a specific course or module within a broader academic program, possibly related to food science, data science, or a specialized topic given the course code format. While the exact content of FDS6930B is not detailed in the prompt, courses with similar codes are often advanced or specialized, intended for graduate-level students.
The course may cover fundamental and advanced topics, methodologies, and applications relevant to the subject area. Students can expect to engage in critical analysis, hands-on projects, and possibly collaborate on research initiatives. The curriculum might include lectures, lab work, and seminars designed to deepen understanding and foster skills pertinent to the discipline.
Key areas of focus could include the latest industry practices, technological advancements, and theoretical frameworks. Assessment methods may comprise exams, project work, presentations, and research papers, aimed at evaluating students’ grasp of the material and ability to apply their knowledge practically. Students interested in enrolling should check the specific institution's course catalog for precise details about prerequisites, instructors, and schedules.
The course may cover fundamental and advanced topics, methodologies, and applications relevant to the subject area. Students can expect to engage in critical analysis, hands-on projects, and possibly collaborate on research initiatives. The curriculum might include lectures, lab work, and seminars designed to deepen understanding and foster skills pertinent to the discipline.
Key areas of focus could include the latest industry practices, technological advancements, and theoretical frameworks. Assessment methods may comprise exams, project work, presentations, and research papers, aimed at evaluating students’ grasp of the material and ability to apply their knowledge practically. Students interested in enrolling should check the specific institution's course catalog for precise details about prerequisites, instructors, and schedules.
Equivalent
The FDS6930B is a dual N-channel MOSFET. Equivalent products may include:
1. AO4616 by Alpha & Omega Semiconductor
2. SI4936ADY by Vishay
3. IRF7319 by Infineon Technologies
These equivalents offer similar voltage and current ratings, packaging, and performance characteristics. Always verify the specifications to ensure compatibility with your application.
1. AO4616 by Alpha & Omega Semiconductor
2. SI4936ADY by Vishay
3. IRF7319 by Infineon Technologies
These equivalents offer similar voltage and current ratings, packaging, and performance characteristics. Always verify the specifications to ensure compatibility with your application.
Features
The FDS6930B is a dual N-channel MOSFET that features low on-resistance and high-speed switching capabilities, making it suitable for applications such as DC-DC converters, power management, and load switches. Key features include:
1. Low On-Resistance: The FDS6930B exhibits low R_DS(on), which reduces power loss and enhances efficiency in power conversion applications.
2. High-Speed Switching: It supports high-speed operation, beneficial for applications requiring quick switching times.
3. Dual N-Channel Configuration: This allows for more versatile circuit designs, as it can handle two separate loads or be used in applications like synchronous rectification.
4. Compact Package: Available in a small surface-mount package, it is ideal for space-constrained designs.
5. Thermal Performance: Efficient heat dissipation supports reliable operation over a range of temperatures.
6. Robust Design: Features like avalanche ruggedness and ESD protection enhance the device's durability and reliability.
These features make the FDS6930B suitable for a variety of electronics applications, particularly in areas demanding efficient power handling and compact design.
1. Low On-Resistance: The FDS6930B exhibits low R_DS(on), which reduces power loss and enhances efficiency in power conversion applications.
2. High-Speed Switching: It supports high-speed operation, beneficial for applications requiring quick switching times.
3. Dual N-Channel Configuration: This allows for more versatile circuit designs, as it can handle two separate loads or be used in applications like synchronous rectification.
4. Compact Package: Available in a small surface-mount package, it is ideal for space-constrained designs.
5. Thermal Performance: Efficient heat dissipation supports reliable operation over a range of temperatures.
6. Robust Design: Features like avalanche ruggedness and ESD protection enhance the device's durability and reliability.
These features make the FDS6930B suitable for a variety of electronics applications, particularly in areas demanding efficient power handling and compact design.
Pinout
The FDS6930B is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It comes in an SO-8 package, which typically has 8 pins. The pin configuration and their functions are as follows:
1. Pin 1 (Source1): Source terminal for the first MOSFET.
2. Pin 2 (Gate1): Gate terminal for the first MOSFET.
3. Pin 3 (Source1): Source terminal for the first MOSFET (common with Pin 1).
4. Pin 4 (Drain1): Drain terminal for the first MOSFET.
5. Pin 5 (Drain2): Drain terminal for the second MOSFET.
6. Pin 6 (Source2): Source terminal for the second MOSFET.
7. Pin 7 (Gate2): Gate terminal for the second MOSFET.
8. Pin 8 (Source2): Source terminal for the second MOSFET (common with Pin 6).
The FDS6930B is commonly used for power management applications, offering low on-resistance and efficient switching characteristics.
1. Pin 1 (Source1): Source terminal for the first MOSFET.
2. Pin 2 (Gate1): Gate terminal for the first MOSFET.
3. Pin 3 (Source1): Source terminal for the first MOSFET (common with Pin 1).
4. Pin 4 (Drain1): Drain terminal for the first MOSFET.
5. Pin 5 (Drain2): Drain terminal for the second MOSFET.
6. Pin 6 (Source2): Source terminal for the second MOSFET.
7. Pin 7 (Gate2): Gate terminal for the second MOSFET.
8. Pin 8 (Source2): Source terminal for the second MOSFET (common with Pin 6).
The FDS6930B is commonly used for power management applications, offering low on-resistance and efficient switching characteristics.
Manufacturer
The FDS6930B is manufactured by ON Semiconductor. ON Semiconductor, now officially known as onsemi, is a company that specializes in semiconductor manufacturing. It provides a wide range of products, including power and signal management, logic, discrete, and custom devices for various applications. These applications span across automotive, industrial, cloud power, 5G and infrastructure, Internet of Things (IoT), and consumer electronics sectors. The company is well-regarded for its focus on energy-efficient solutions and plays a significant role in advancing the development and deployment of innovative semiconductor technologies.
Application
The FDS6930B is a dual N-channel MOSFET commonly used in applications requiring efficient power management. It is found in power supply circuits, motor drivers, and DC-DC converters due to its low on-resistance and fast switching capabilities. Additionally, it is utilized in battery-powered devices to enhance power efficiency and extend battery life. The MOSFET is also suitable for load switching and protection applications in computing and telecommunications equipment. Its compact design makes it ideal for portable electronics where space is at a premium.
Package
The FDS6930B is a dual N-channel MOSFET, and it is typically housed in an SO-8 package, which is a standard small-outline package with eight pins.