DMG1012T-7 vs DMG1012UW-7

對 DMG1012T-7 和 DMG1012UW-7 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification DMG1012T-7 DMG1012UW-7
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain(Id) @ 25°C 630mA (Ta) 1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On(Max) @ Id Vgs 400mOhm @ 600mA, 4.5V 450mOhm @ 600mA, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.74 nC @ 4.5 V 0.74 nC @ 4.5 V
Vgs(Max) ±6V ±6V
Input Capacitance(Ciss)(Max) @ Vds 60.67 pF @ 16 V 60.67 pF @ 16 V
Power Dissipation (Max) 280mW (Ta) 290mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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