規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 450mOhm @ 600mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.74 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| InputCapacitance(Ciss)(Max)@Vds | 60.67 pF @ 16 V |
| PowerDissipation(Max) | 290mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-323 |
概述
Description
DMG1012UW-7 is a compact, high-performance DC-DC converter module designed for industrial and embedded applications. It features a wide input voltage range (4.5V to 36V), a fixed 3.3V or 5V output, and delivers up to 1A of current. With high efficiency (up to 96%) and low standby power consumption, it is ideal for power-sensitive systems.
Key features include:
- Small size: 12.7mm x 12.7mm x 7.1mm, suitable for space-constrained designs.
- Robust performance: Operates in -40°C to +85°C environments, with overcurrent and overtemperature protection.
- Easy integration: Surface-mount design with minimal external components required.
Common applications include IoT devices, industrial automation, and telecom equipment. Its reliability and efficiency make it a popular choice for engineers seeking a compact power solution.
Key features include:
- Small size: 12.7mm x 12.7mm x 7.1mm, suitable for space-constrained designs.
- Robust performance: Operates in -40°C to +85°C environments, with overcurrent and overtemperature protection.
- Easy integration: Surface-mount design with minimal external components required.
Common applications include IoT devices, industrial automation, and telecom equipment. Its reliability and efficiency make it a popular choice for engineers seeking a compact power solution.
Features
The DMG1012UW-7 is a N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 7.5A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1-2.5V
- Fast Switching Speed: Low gate charge (Qg) for efficient performance
- Power Dissipation: 2.5W
- Package: SOT-23 (compact surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Its low RDS(on) and small form factor make it ideal for space-constrained, high-efficiency designs.
- Voltage Rating: 30V
- Current Rating: 7.5A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1-2.5V
- Fast Switching Speed: Low gate charge (Qg) for efficient performance
- Power Dissipation: 2.5W
- Package: SOT-23 (compact surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Its low RDS(on) and small form factor make it ideal for space-constrained, high-efficiency designs.
Pinout
The DMG1012UW-7 is a dual N-channel MOSFET in a SOT-363 (SC-88) package with 6 pins.
### Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal of the second MOSFET.
4. Pin 4 (Gate 2): Controls the second MOSFET.
5. Pin 5 (Source 2): Source terminal of the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal of the first MOSFET.
### Key Features:
- 30V drain-source voltage (VDS)
- 1.5A continuous drain current (ID)
- Low threshold voltage (VGS(th) ~1V)
- Commonly used in power switching, load switching, and DC-DC conversion.
This compact dual MOSFET is ideal for space-constrained applications.
### Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal of the second MOSFET.
4. Pin 4 (Gate 2): Controls the second MOSFET.
5. Pin 5 (Source 2): Source terminal of the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal of the first MOSFET.
### Key Features:
- 30V drain-source voltage (VDS)
- 1.5A continuous drain current (ID)
- Low threshold voltage (VGS(th) ~1V)
- Commonly used in power switching, load switching, and DC-DC conversion.
This compact dual MOSFET is ideal for space-constrained applications.
Manufacturer
The DMG1012UW-7 is a MOSFET manufactured by Diodes Incorporated, a global semiconductor company specializing in high-quality discrete, analog, and mixed-signal ICs. Founded in 1959 and headquartered in Plano, Texas, Diodes Inc. focuses on power management, signal integrity, and efficiency solutions for consumer electronics, computing, automotive, and industrial applications. The company is known for cost-effective, reliable components and holds a strong presence in the semiconductor industry.
Package
The DMG1012UW-7 is a N-channel MOSFET in a SOT-323 surface-mount package. It features a compact design, suitable for high-density PCB applications, with three pins for efficient power management in low-voltage circuits.
