CSD17575Q3 vs CSD17303Q5
對 CSD17303Q5 和 CSD17575Q3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
TDFN-8
描述
CSD17303Q5 30V, N CHANNEL NEXFET
MOSFET N-CH 30V 60A 8VSON
Series
NexFET™
NexFET™
Part Status
Active
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 100A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V
-
Rds On (Max) @ Id, Vgs
2.4mOhm @ 25A, 8V
-
Vgs(th) (Max) @ Id
1.6V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 4.5 V
-
Vgs (Max)
+10V, -8V
-
Input Capacitance (Ciss) (Max) @ Vds
3420 pF @ 15 V
-
Power Dissipation (Max)
3.2W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Bulk
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
30 V
Current-ContinuousDrain(Id)@25°C
-
60A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
-
4.5V, 10V
RdsOn(Max)@IdVgs
-
2.3mOhm @ 25A, 10V
Vgs(th)(Max)@Id
-
1.8V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
30 nC @ 4.5 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
4420 pF @ 15 V
PowerDissipation(Max)
-
2.8W (Ta), 108W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
