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CSD17577Q3AT
+物料清單MOSFET N-CH 30V 35A 8VSON
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製造商德州儀器
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製造商部分 #CSD17577Q3AT
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有存貨7259
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規格
| 屬性 | 價值 |
| Supplier | Texas Instruments,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4.8mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2310 pF @ 15 V |
| PowerDissipation(Max) | 2.8W (Ta), 53W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (3x3.3) |
概述
Description
CSD17577Q3AT appears to be a technical or code designation, possibly related to a course, module, or specific project. Without specific context, it's difficult to provide a detailed introduction, but here's a general approach:
CSD17577Q3AT might denote a specialized course or program, potentially in a technical or scientific field. It could involve instruction on advanced topics, possibly related to computing, engineering, or data analysis. The course might cover theoretical concepts, practical applications, and problem-solving techniques relevant to the designation. Participants would typically engage in lectures, hands-on practice, and assessments to develop their understanding and skills.
If this is related to a project or product, it could involve specific technical specifications or components, possibly in electronics, software development, or data systems. Understanding the content would require familiarity with the relevant field’s principles and technologies.
For precise information, check the official source or documentation associated with CSD17577Q3AT.
CSD17577Q3AT might denote a specialized course or program, potentially in a technical or scientific field. It could involve instruction on advanced topics, possibly related to computing, engineering, or data analysis. The course might cover theoretical concepts, practical applications, and problem-solving techniques relevant to the designation. Participants would typically engage in lectures, hands-on practice, and assessments to develop their understanding and skills.
If this is related to a project or product, it could involve specific technical specifications or components, possibly in electronics, software development, or data systems. Understanding the content would require familiarity with the relevant field’s principles and technologies.
For precise information, check the official source or documentation associated with CSD17577Q3AT.
Equivalent
The CSD17577Q3AT is a 30V N-channel MOSFET from Texas Instruments. Equivalent products include:
1. NXP PSMN1R2-30YLD
2. ON Semiconductor NTMFS5C404NL
3. Infineon BSC010N04LSI
4. Vishay SiRA12DP
These equivalents may have similar specifications, but it's crucial to compare their datasheets to ensure compatibility for your specific application.
1. NXP PSMN1R2-30YLD
2. ON Semiconductor NTMFS5C404NL
3. Infineon BSC010N04LSI
4. Vishay SiRA12DP
These equivalents may have similar specifications, but it's crucial to compare their datasheets to ensure compatibility for your specific application.
Features
The CSD17577Q3AT is a Power MOSFET typically used in electronic applications for its efficiency and reliability. Here are its key features:
1. Type: N-Channel MOSFET
2. Voltage Rating: Typically around 30V maximum drain-source voltage (V_DS).
3. Current Rating: Supports a continuous drain current (I_D) of around 84A.
4. R_DS(on): Low on-resistance, usually around 1.8 mΩ, which minimizes power loss and heat generation.
5. Package: Available in a compact SON 3.3x3.3mm package which is suitable for space-constrained applications.
6. Thermal Performance: Excellent thermal resistance, allowing efficient heat dissipation.
7. Applications: Ideal for use in synchronous buck converters, DC-DC converters, and other power management applications.
8. Gate Charge: Low gate charge for efficient high-speed switching.
9. Operation Temperature Range: Suitable for a wide range of operating temperatures to ensure reliability in various environments.
These features make the CSD17577Q3AT a suitable choice for high-efficiency power conversion and management in consumer electronics and industrial applications.
1. Type: N-Channel MOSFET
2. Voltage Rating: Typically around 30V maximum drain-source voltage (V_DS).
3. Current Rating: Supports a continuous drain current (I_D) of around 84A.
4. R_DS(on): Low on-resistance, usually around 1.8 mΩ, which minimizes power loss and heat generation.
5. Package: Available in a compact SON 3.3x3.3mm package which is suitable for space-constrained applications.
6. Thermal Performance: Excellent thermal resistance, allowing efficient heat dissipation.
7. Applications: Ideal for use in synchronous buck converters, DC-DC converters, and other power management applications.
8. Gate Charge: Low gate charge for efficient high-speed switching.
9. Operation Temperature Range: Suitable for a wide range of operating temperatures to ensure reliability in various environments.
These features make the CSD17577Q3AT a suitable choice for high-efficiency power conversion and management in consumer electronics and industrial applications.
Pinout
The CSD17577Q3AT is a N-channel MOSFET manufactured by Texas Instruments. It comes in a 3.3 mm × 3.3 mm SON package, also known as a QFN package. The pin count for the CSD17577Q3AT is 8. The device is designed for power management applications, offering low on-resistance and high efficiency.
Here is a concise description of its pin functions:
1. Gate (G): Controls the MOSFET’s switching operation.
2. Source (S): The source terminal, typically connected to ground in a low-side switch configuration.
3. Drain (D): The drain terminal, connected to the load.
4. Thermal Pad: The thermal pad on the bottom side of the package is used for heat dissipation and is typically connected to the source terminal.
The remaining pins are either additional connections for the gate, source, or part of the thermal/ground connections. This MOSFET is commonly used in applications requiring efficient switching, such as DC-DC converters and load switches.
Here is a concise description of its pin functions:
1. Gate (G): Controls the MOSFET’s switching operation.
2. Source (S): The source terminal, typically connected to ground in a low-side switch configuration.
3. Drain (D): The drain terminal, connected to the load.
4. Thermal Pad: The thermal pad on the bottom side of the package is used for heat dissipation and is typically connected to the source terminal.
The remaining pins are either additional connections for the gate, source, or part of the thermal/ground connections. This MOSFET is commonly used in applications requiring efficient switching, such as DC-DC converters and load switches.
Manufacturer
The CSD17577Q3AT is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and manufactures semiconductors and various integrated circuits. TI's products are widely used in electronics, including applications in industrial, automotive, personal electronics, communications equipment, and enterprise systems. The company is renowned for its significant contributions to the development of integrated circuits and its leadership in the field of analog and embedded processing.
Application
CSD17577Q3AT is a silicon carbide (SiC) Schottky barrier diode, which is typically used in applications requiring high efficiency and reliability. Its application areas include power supplies, solar inverters, motor drives, electric vehicle charging stations, and uninterruptible power supplies (UPS). It is also utilized in high-frequency applications where its fast switching capabilities and low reverse recovery time enhance performance. Additionally, it is suitable for use in high-temperature environments due to the superior thermal properties of silicon carbide.
Package
The CSD17577Q3AT is packaged in a small-outline transistor (SON) configuration, specifically using a 3.3mm x 3.3mm SON package. This type of package is known for its low profile and efficient heat dissipation, making it suitable for compact electronic applications.
