C3M0015065K vs C3M0065100K

對 C3M0015065K 和 C3M0065100K 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

C3M0015065K

Wolfspeed，股份有限公司。

Lifecycle
Active
Stock
3537 件
Package
TO-247-4
Series
電晶體-FET、MOSFET-單
+物料清單 詢價
Part B

C3M0065100K

Wolfspeed，股份有限公司。

Lifecycle
Active
Stock
1451 件
Package
TO-247-4
Series
電晶體-FET、MOSFET-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification C3M0015065K C3M0065100K
Series C3M™ C3M™
Part Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V 1000 V
Current - Continuous Drain(Id) @ 25°C 120A (Tc) 35A (Tc)
Drive Voltage(Max Rds On Min Rds On) 15V 15V
Rds On(Max) @ Id Vgs 21mOhm @ 55.8A, 15V 78mOhm @ 20A, 15V
Vgs(th)(Max) @ Id 3.6V @ 15.5mA 3.5V @ 5mA
Gate Charge(Qg)(Max) @ Vgs 188 nC @ 15 V 35 nC @ 15 V
Vgs(Max) +15V, -4V +19V, -8V
Input Capacitance(Ciss)(Max) @ Vds 5011 pF @ 400 V 660 pF @ 600 V
Power Dissipation (Max) 416W (Tc) 113.5W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
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