規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 78mOhm @ 20A, 15V |
| Vgs(th)(Max) @ Id | 3.5V @ 5mA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 15 V |
| Vgs(Max) | +19V, -8V |
| Input Capacitance(Ciss)(Max) @ Vds | 660 pF @ 600 V |
| Power Dissipation (Max) | 113.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
概述
Description
The C3M0065100K is a 650V, 100mΩ silicon carbide (SiC) MOSFET from Wolfspeed, designed for high-efficiency power applications. Key features include:
- Low on-resistance (RDS(on)): Enhances efficiency in high-power systems.
- Fast switching: Reduces switching losses, ideal for high-frequency designs.
- High-temperature operation: Reliable performance in harsh environments.
- SiC technology: Offers superior thermal conductivity and breakdown voltage compared to silicon.
Common applications include electric vehicle (EV) charging, solar inverters, and industrial power supplies. Its robust design ensures improved energy efficiency and reduced system size.
For detailed specs, refer to Wolfspeed’s datasheet.
- Low on-resistance (RDS(on)): Enhances efficiency in high-power systems.
- Fast switching: Reduces switching losses, ideal for high-frequency designs.
- High-temperature operation: Reliable performance in harsh environments.
- SiC technology: Offers superior thermal conductivity and breakdown voltage compared to silicon.
Common applications include electric vehicle (EV) charging, solar inverters, and industrial power supplies. Its robust design ensures improved energy efficiency and reduced system size.
For detailed specs, refer to Wolfspeed’s datasheet.
Equivalent
The C3M0065100K is a 650V, 100mΩ SiC MOSFET from Wolfspeed. Equivalent alternatives include:
- Infineon: IMZA65R100M1H (650V, 100mΩ)
- ROHM: SCT3040KR (650V, 100mΩ)
- STMicroelectronics: SCTW100N65G2V (650V, 100mΩ)
These offer similar performance in SiC MOSFET technology. Verify pinout and specs for compatibility.
- Infineon: IMZA65R100M1H (650V, 100mΩ)
- ROHM: SCT3040KR (650V, 100mΩ)
- STMicroelectronics: SCTW100N65G2V (650V, 100mΩ)
These offer similar performance in SiC MOSFET technology. Verify pinout and specs for compatibility.
Features
The C3M0065100K is a 650V, 100mΩ SiC MOSFET from Wolfspeed, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): 100mΩ (typ.) at 15V VGS, reducing conduction losses.
- High Voltage Rating: 650V, suitable for industrial and automotive applications.
- Fast Switching: Low gate charge (QG) and output capacitance (COSS), enabling high-frequency operation.
- High Temperature Operation: Robust performance up to 175°C.
- Low Reverse Recovery Losses: SiC technology minimizes switching losses.
- Avalanche Rated: Enhanced ruggedness for harsh environments.
Ideal for power supplies, EV charging, and renewable energy systems.
- Low On-Resistance (RDS(on)): 100mΩ (typ.) at 15V VGS, reducing conduction losses.
- High Voltage Rating: 650V, suitable for industrial and automotive applications.
- Fast Switching: Low gate charge (QG) and output capacitance (COSS), enabling high-frequency operation.
- High Temperature Operation: Robust performance up to 175°C.
- Low Reverse Recovery Losses: SiC technology minimizes switching losses.
- Avalanche Rated: Enhanced ruggedness for harsh environments.
Ideal for power supplies, EV charging, and renewable energy systems.
Pinout
The C3M0065100K is a 650V, 100mΩ SiC MOSFET from Wolfspeed in a TO-247-4L package with 4 pins.
Pin Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage terminal.
3. Source (S) – Current return path.
4. Kelvin Source (Sₖ) – Separate sense terminal for improved gate drive accuracy, reducing parasitic inductance.
This configuration enhances high-frequency performance and reduces switching losses.
Pin Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage terminal.
3. Source (S) – Current return path.
4. Kelvin Source (Sₖ) – Separate sense terminal for improved gate drive accuracy, reducing parasitic inductance.
This configuration enhances high-frequency performance and reduces switching losses.
Application
The C3M0065100K is a SiC MOSFET from Wolfspeed, designed for high-efficiency power applications. Key application areas include:
- Electric Vehicles (EVs): On-board chargers, DC-DC converters.
- Renewable Energy: Solar inverters, wind power systems.
- Industrial Power Supplies: High-frequency SMPS, UPS systems.
- Data Centers: Server power supplies, PFC circuits.
- Aerospace & Defense: High-reliability power conversion.
Its 650V/60mΩ rating and fast switching make it ideal for high-power, high-frequency designs requiring efficiency and thermal performance.
- Electric Vehicles (EVs): On-board chargers, DC-DC converters.
- Renewable Energy: Solar inverters, wind power systems.
- Industrial Power Supplies: High-frequency SMPS, UPS systems.
- Data Centers: Server power supplies, PFC circuits.
- Aerospace & Defense: High-reliability power conversion.
Its 650V/60mΩ rating and fast switching make it ideal for high-power, high-frequency designs requiring efficiency and thermal performance.
Package
The C3M0065100K is a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor) in a TO-247-4L package. It features a 650V voltage rating, 100mΩ on-resistance, and is designed for high-efficiency power applications. The 4-lead TO-247 variant reduces switching losses and improves thermal performance compared to standard TO-247 packages.
