BC847BVN115 vs BC847BW

對 BC847BVN115 和 BC847BW 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

BC847BW

迪奧泰克半導體

Lifecycle
Active
Stock
3010 件
Package
SOT-323
Series
電晶體-雙極型電晶體（BJT）-單
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BC847BVN115 BC847BW
Part Status Active Active
Transistor Type - NPN
Current - Collector(Ic)(Max) - 100 mA
Voltage - Collector Emitter Breakdown(Max) - 45 V
Vce Saturation(Max) @ Ib Ic - 600mV @ 5mA, 100mA
Current - Collector Cutoff(Max) - 15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce - 200 @ 2mA, 5V
Power - Max - 200 mW
Frequency - Transition - 100MHz
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
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