BC847BVN115 vs BC847BS

對 BC847BVN115 和 BC847BS 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

BC847BS

安森美

Lifecycle
Active
Stock
2430 件
Package
SOT-363
Series
雙極電晶體（BJT）陣列
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BC847BVN115 BC847BS
Part Status Active Obsolete
Transistor Type - 2 NPN (Dual)
Current - Collector(Ic)(Max) - 100mA
Voltage - Collector Emitter Breakdown(Max) - 45V
Vce Saturation(Max) @ Ib Ic - 650mV @ 5mA, 100mA
Current - Collector Cutoff(Max) - 15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce - 200 @ 2mA, 5V
Power - Max - 210mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
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