Part A
2N7002K-T1-GE3
矽尼克斯
- Lifecycle
- Active
- Stock
- 4371 件
- Package
- SOT-23-3
- Series
- 電晶體-FET、MOSFET-單
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-E3 and 2N7002K-T1-GE3 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package footprint, and pin configuration. The GE3 suffix denotes a halogen-free, RoHS-compliant molding compound, making the GE3 variant the preferred choice for environmentally regulated designs while remaining a direct drop-in replacement for the E3 version.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Environmental Compliance
High match
Parts at a glance
Part B
2N7002K-T1-E3
矽尼克斯
- Lifecycle
- Active
- Stock
- 3495 件
- Package
- SOT-23-3
- Series
- 電晶體-FET、MOSFET-單
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002K-T1-E3 | 2N7002K-T1-GE3 | Why it matters |
|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Same manufacturer ensures consistent process technology and quality standards. |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET | Both are N-channel enhancement-mode MOSFETs, ensuring functional interchangeability in switching circuits. |
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit voltage requirements. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Determines the maximum load current the MOSFET can handle continuously. |
| Rds(on) at Vgs = 10 V | 1.2 Ω | 1.2 Ω | Lower on-resistance reduces conduction losses and heat dissipation during operation. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Defines the gate voltage needed to turn on the device; critical for logic-level compatibility. |
| Package / Case | SOT-23 (TO-236) | SOT-23 (TO-236) | Same footprint ensures drop-in PCB compatibility without layout changes. |
| Power Dissipation (Pd) | 350 mW | 350 mW | Maximum power the package can dissipate; affects thermal design and reliability. |
| Packaging / Ordering Suffix | Tape and Reel, Lead-Free (E3 = RoHS compliant, matte tin) | Tape and Reel, Lead-Free (GE3 = RoHS compliant, green/lead-free) | Different suffix codes indicate different lead-frame/plating or green-molding compound formulations, which may affect solderability and environmental compliance documentation. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window for reliable performance in harsh environments. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-T1-GE3 | 2N7002K-T1-E3 |
|---|---|---|
| Series | TrenchFET® | TrenchFET® |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 25 V | 30 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What is the difference between 2N7002K-T1-E3 and 2N7002K-T1-GE3?
The primary difference is the packaging designation: the -E3 suffix indicates lead-free (Pb-free) RoHS-compliant packaging, while the -GE3 suffix indicates lead-free, halogen-free, and RoHS-compliant packaging. Both are otherwise the same 2N7002K N-channel MOSFET die in the SOT-23 package.
Are 2N7002K-T1-E3 and 2N7002K-T1-GE3 electrically identical?
Yes. Both variants share the same electrical specifications, including drain-source voltage (60 V), continuous drain current (300 mA at 25 °C), and RDS(on) characteristics, because they use the same silicon die and package.
Can 2N7002K-T1-E3 and 2N7002K-T1-GE3 be used interchangeably?
Yes, they are functionally interchangeable in most applications. The only difference is the environmental compliance level of the packaging materials, so substitution is acceptable unless a specific halogen-free requirement mandates the -GE3 variant.
What is the drain-source voltage rating of these MOSFETs?
Both 2N7002K-T1-E3 and 2N7002K-T1-GE3 have a maximum drain-source voltage (VDS) rating of 60 V.
What is the continuous drain current rating for these devices?
The continuous drain current (ID) is 300 mA at a case temperature of 25 °C for both variants.
What package do 2N7002K-T1-E3 and 2N7002K-T1-GE3 use?
Both devices are supplied in the SOT-23 (TO-236) surface-mount package.
Do these MOSFETs meet RoHS requirements?
Yes. Both the -E3 and -GE3 versions are RoHS-compliant. The -GE3 version additionally meets halogen-free requirements.
What is the typical RDS(on) for these MOSFETs?
The typical on-resistance RDS(on) is 1.2 Ω at VGS = 10 V and 1.6 Ω at VGS = 4.5 V, for both variants.