2N7002A-7 vs 2N7002K-T1-GE3

對 2N7002A-7 和 2N7002K-T1-GE3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Specification 2N7002A-7 2N7002K-T1-GE3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V 30 pF @ 25 V
Power Dissipation (Max) 370mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchFET®
Gate Charge(Qg)(Max) @ Vgs - 0.6 nC @ 4.5 V
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