2N7002,215 vs 2N7002K-7

對 2N7002,215 和 2N7002K-7 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002,215 are functionally compatible N-channel MOSFETs suitable for direct substitution in most low-power switching applications. Both devices share identical drain-source voltage, continuous drain current, and power dissipation ratings, with the primary distinction being package style and gate threshold voltage tolerance. Designers should verify gate drive compatibility and thermal layout when substituting between the SOT-23 and TO-236AB packages.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type Validation required
Gate Threshold Voltage Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002K-7
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 1mA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 50 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 370mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.3 nC @ 4.5 V
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