2N7002L vs 2N7002,215

對 2N7002L 和 2N7002,215 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002,215 and 2N7002L are functionally equivalent N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 300 mA continuous drain current, SOT-23 package, and RDS(on) characteristics. Both are suitable for low-side switching, level shifting, and small-signal load control. Designers may treat them as interchangeable in most applications, though gate threshold voltage spread and input capacitance should be validated against the specific drive circuit.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002L

安森美

Lifecycle
Active
Stock
2923 件
Package
SOT-23-3
Series
電晶體-FET、MOSFET-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002L 2N7002,215
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 115mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 10V
Rds On(Max) @ Id Vgs 7.5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 50 pF @ 10 V
Power Dissipation (Max) 200mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™
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