ZXMN6A11GTA

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ZXMN6A11GTA

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MOSFET N-CH 60V 3.1A SOT223

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規格

屬性 價值
Supplier Diodes Incorporated
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 3.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 120mOhm @ 2.5A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 5.7 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 330 pF @ 40 V
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3

概述

Description

The ZXMN6A11GTA is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Diodes Incorporated. It is designed for applications requiring efficient power management and switching. Key features of this component include low on-resistance, fast switching speed, and high efficiency, making it suitable for use in DC-DC converters, load switches, and other power management systems.
The device operates at a voltage range of 60V and can handle a continuous current of approximately 4.3A, with a total power dissipation of 1.4W. It is typically packaged in the SOT23 form factor, which is a small, surface-mount package, facilitating easy integration into compact circuit designs.
The ZXMN6A11GTA is valued for its robustness, high-speed performance, and thermal efficiency. It is commonly used in consumer electronics, automotive, and industrial applications where space and efficiency are critical. Its reliable performance under different conditions makes it a versatile choice for designers looking to optimize power management solutions.

Equivalent

The ZXMN6A11GTA is an N-channel MOSFET. Equivalent products are typically low-voltage N-channel MOSFETs with similar specifications. Some potential equivalents include:
1. IRF520 – Although it has a higher voltage rating, for general applications it could work.
2. 2N7002 – Similar in function but usually for lower current applications.
3. AO3400 – Offers comparable voltage and current handling.
4. BS170 – Another common equivalent with similar characteristics.
Always ensure to check the datasheets for exact specifications and compatibility for your specific application.

Features

The ZXMN6A11GTA is an N-channel MOSFET designed for various electronic applications. Here are its key features:
1. Voltage and Current: It typically supports a drain-source voltage (Vds) of 60V and can handle a continuous drain current (Id) up to 4A.
2. Rds(on): The device features a low on-state resistance, usually around 0.1 ohms, which helps reduce power loss and increases efficiency.
3. Gate Threshold Voltage: The gate threshold voltage is generally between 2V to 4V, making it compatible with logic-level signals.
4. Package Type: It is available in a compact SOT-23 package, suitable for space-constrained applications.
5. Fast Switching: The MOSFET is designed for fast switching speeds, which enhances performance in high-frequency circuits.
6. Applications: Commonly used in power management systems, DC-DC converters, load switches, and various consumer electronics.
These features make the ZXMN6A11GTA a versatile component suitable for efficient power control and management in electronic devices.

Pinout

The ZXMN6A11GTA is a N-channel enhancement mode MOSFET. It typically comes in a SOT-23 package, which has 3 pins. Here are the pin functions:
1. Gate: The gate terminal is used to control the conductivity between the drain and source. By applying a voltage to the gate, an electric field is created, which turns the MOSFET on.
2. Drain: The drain terminal is where the load current enters the MOSFET. When the MOSFET is turned on, current flows from drain to source.
3. Source: The source terminal is where the current exits the MOSFET. It's connected to the ground or the return path in the circuit.
This MOSFET is commonly used for switching applications due to its low on-resistance and fast switching speed, making it suitable for various power management tasks in portable and battery-powered applications.

Manufacturer

The ZXMN6A11GTA is manufactured by Diodes Incorporated. Diodes Incorporated is a global semiconductor company that designs, manufactures, and supplies a broad range of discrete, logic, analog, and mixed-signal semiconductor products. The company's products are used in a variety of applications, including consumer electronics, computing, communications, industrial, and automotive markets. Diodes Incorporated is known for its broad product portfolio, which includes diodes, rectifiers, transistors, MOSFETs, protection devices, and power management ICs. The company emphasizes high-quality, cost-effective products and serves both large enterprises and small to medium-sized customers worldwide.

Application

The ZXMN6A11GTA is an N-channel MOSFET commonly used in various electronic applications. Its key application areas include:
1. Switching Loads: Ideal for switching and controlling DC loads in circuits due to low on-resistance.
2. Power Management: Utilized in power supply circuits for efficient power distribution and management.
3. DC-DC Converters: Employed in step-up and step-down converters for voltage regulation.
4. Battery-Powered Devices: Suitable for portable electronics, enhancing battery life through efficient power handling.
5. Motor Control: Used in low-power motor control applications for driving small motors.
6. RF and Signal Amplification: Applicable in RF circuits and signal amplification due to its fast switching capabilities.

Package

The ZXMN6A11GTA is typically provided in a SOT-23 package, which is a small outline transistor package used for surface-mount devices.

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