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ZXMN6A11GTA
+物料清單MOSFET N-CH 60V 3.1A SOT223
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製造商二極體公司
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製造商部分 #ZXMN6A11GTA
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規格
| 屬性 | 價值 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 3.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 120mOhm @ 2.5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.7 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 330 pF @ 40 V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-3 |
概述
Description
The device operates at a voltage range of 60V and can handle a continuous current of approximately 4.3A, with a total power dissipation of 1.4W. It is typically packaged in the SOT23 form factor, which is a small, surface-mount package, facilitating easy integration into compact circuit designs.
The ZXMN6A11GTA is valued for its robustness, high-speed performance, and thermal efficiency. It is commonly used in consumer electronics, automotive, and industrial applications where space and efficiency are critical. Its reliable performance under different conditions makes it a versatile choice for designers looking to optimize power management solutions.
Equivalent
1. IRF520 – Although it has a higher voltage rating, for general applications it could work.
2. 2N7002 – Similar in function but usually for lower current applications.
3. AO3400 – Offers comparable voltage and current handling.
4. BS170 – Another common equivalent with similar characteristics.
Always ensure to check the datasheets for exact specifications and compatibility for your specific application.
Features
1. Voltage and Current: It typically supports a drain-source voltage (Vds) of 60V and can handle a continuous drain current (Id) up to 4A.
2. Rds(on): The device features a low on-state resistance, usually around 0.1 ohms, which helps reduce power loss and increases efficiency.
3. Gate Threshold Voltage: The gate threshold voltage is generally between 2V to 4V, making it compatible with logic-level signals.
4. Package Type: It is available in a compact SOT-23 package, suitable for space-constrained applications.
5. Fast Switching: The MOSFET is designed for fast switching speeds, which enhances performance in high-frequency circuits.
6. Applications: Commonly used in power management systems, DC-DC converters, load switches, and various consumer electronics.
These features make the ZXMN6A11GTA a versatile component suitable for efficient power control and management in electronic devices.
Pinout
1. Gate: The gate terminal is used to control the conductivity between the drain and source. By applying a voltage to the gate, an electric field is created, which turns the MOSFET on.
2. Drain: The drain terminal is where the load current enters the MOSFET. When the MOSFET is turned on, current flows from drain to source.
3. Source: The source terminal is where the current exits the MOSFET. It's connected to the ground or the return path in the circuit.
This MOSFET is commonly used for switching applications due to its low on-resistance and fast switching speed, making it suitable for various power management tasks in portable and battery-powered applications.
Manufacturer
Application
1. Switching Loads: Ideal for switching and controlling DC loads in circuits due to low on-resistance.
2. Power Management: Utilized in power supply circuits for efficient power distribution and management.
3. DC-DC Converters: Employed in step-up and step-down converters for voltage regulation.
4. Battery-Powered Devices: Suitable for portable electronics, enhancing battery life through efficient power handling.
5. Motor Control: Used in low-power motor control applications for driving small motors.
6. RF and Signal Amplification: Applicable in RF circuits and signal amplification due to its fast switching capabilities.