WNSC2D10650TJ

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WNSC2D10650TJ

+物料清單

SILICON CARBIDE SCHOTTKY DIODE

  • 製造商瑞能電晶體

  • 製造商部分 #WNSC2D10650TJ

  • 包裹 VSFN-4

  • 有存貨8081

365 天品質保證

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90-日售後保障

正品保證

規格

屬性 價值
Supplier WeEn Semiconductors
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified(Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Capacitance @ Vr F 310pF @ 1V, 1MHz
Mounting Type Surface Mount
Supplier Device Package 5-DFN (8x8)

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