規格
| 屬性 | 價值 |
| Supplier | Winbond Electronics |
| Package / Case | Tray |
| Series | SpiFlash® |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 512Mb (64M x 8) |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 104 MHz |
| Write Cycle Time - Word Page | 700µs |
| Access Time | 7 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
W25N512GWEIR is a Winbond 512-Mbit serial NAND Flash memory in the W25N family. It uses a SPI‑compatible interface (with quad I/O modes available) and stores data in pages within blocks. It supports standard NAND operations: read, program (page program), and erase (block erase), along with on‑chip ECC, bad‑block management, and wear leveling. Larger capacity devices typically require 4‑byte addressing and a flash controller to manage addressing and lifecycle. Applications include embedded storage, boot/code storage, and firmware/data storage in devices that need nonvolatile memory with a low pin count. For exact electrical specs (voltage, timing, endurance, package, and performance), refer to the official W25N512GWEIR datasheet.
Equivalent
W25N512GWEIR is a 512-Mbit serial NAND flash. Common equivalents:
- Macronix MX25N512G
- Spansion/Cypress S25NL512S
Note: cross-references depend on ONFI version, package, and temperature grade; always verify against the respective datasheets.
- Macronix MX25N512G
- Spansion/Cypress S25NL512S
Note: cross-references depend on ONFI version, package, and temperature grade; always verify against the respective datasheets.
Features
W25N512GWEIR is Winbond’s 512‑Gbit serial NAND flash.
Key features:
- Density: 512 Gbit (64 GB) serial NAND.
- Interface: supports x1/x2/x4 I/O (Dual/Quad IO) for higher throughput.
- Organization: 2 KB main page with spare area; supports random access, cache read, and read-while-write.
- Throughput: enhanced by multi-plane (2/4-plane) operation and interleaving.
- ECC and reliability: on-die BCH/ECC with options for external ECC; automatic bad-block management and wear leveling; block protection and security features.
- Operations: page program and block erase; partial-page programming; fast read modes.
- Durability and range: designed for robust operation with good data retention; suitable for harsh environments.
- Power/packaging: supports low-power modes; typical wide operating temperature range.
- Applications: embedded storage, SSDs, and electronics requiring large-capacity NAND.
Note: Always refer to the official datasheet for exact timing, voltage, and parameter details.
Key features:
- Density: 512 Gbit (64 GB) serial NAND.
- Interface: supports x1/x2/x4 I/O (Dual/Quad IO) for higher throughput.
- Organization: 2 KB main page with spare area; supports random access, cache read, and read-while-write.
- Throughput: enhanced by multi-plane (2/4-plane) operation and interleaving.
- ECC and reliability: on-die BCH/ECC with options for external ECC; automatic bad-block management and wear leveling; block protection and security features.
- Operations: page program and block erase; partial-page programming; fast read modes.
- Durability and range: designed for robust operation with good data retention; suitable for harsh environments.
- Power/packaging: supports low-power modes; typical wide operating temperature range.
- Applications: embedded storage, SSDs, and electronics requiring large-capacity NAND.
Note: Always refer to the official datasheet for exact timing, voltage, and parameter details.
Pinout
- Pin count: 8 pins (8-pin package)
- Function: 512 Mbit serial NAND flash memory with SPI-compatible interface for non-volatile storage. Pins include VCC, VSS, CS# (chip select), CLK, DI (data in), DO (data out), WP# (write protect), and R/B# (ready/busy).
- Function: 512 Mbit serial NAND flash memory with SPI-compatible interface for non-volatile storage. Pins include VCC, VSS, CS# (chip select), CLK, DI (data in), DO (data out), WP# (write protect), and R/B# (ready/busy).
Manufacturer
- Manufacturer: Winbond Electronics Corp. (Taiwan)
- What kind of company: A semiconductor company that designs and manufactures non-volatile memory ICs (NAND/NOR flash, SRAM) for embedded systems across consumer, industrial, and automotive markets.
- What kind of company: A semiconductor company that designs and manufactures non-volatile memory ICs (NAND/NOR flash, SRAM) for embedded systems across consumer, industrial, and automotive markets.
Application
W25N512GWEIR is a high-density 3D NAND flash (512 Gbit) used for nonvolatile storage. Typical applications:
- Solid-state drives (SATA/PCIe) and NVMe caches
- Embedded/system storage in notebooks, tablets, set‑top boxes, and consumer electronics
- Industrial, networking, and data-center equipment (logs, firmware, cache)
- Automotive infotainment and telematics storage
- USB flash drives, memory cards, portable storage
- IoT/edge devices requiring durable, high-capacity flash (data logging, firmware storage)
- Digital cameras and multimedia devices needing large-capacity memory
- Solid-state drives (SATA/PCIe) and NVMe caches
- Embedded/system storage in notebooks, tablets, set‑top boxes, and consumer electronics
- Industrial, networking, and data-center equipment (logs, firmware, cache)
- Automotive infotainment and telematics storage
- USB flash drives, memory cards, portable storage
- IoT/edge devices requiring durable, high-capacity flash (data logging, firmware storage)
- Digital cameras and multimedia devices needing large-capacity memory
Package
8-pin SOP (SOP-8) package.
