規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HEXFRED® |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 16 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 55 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AC |
概述
Description
The VS-HFA08TB60-M3 is a high-frequency, high-efficiency SiC (Silicon Carbide) Schottky diode module designed for power electronics applications. Key features include:
- Voltage/Current Rating: 600V, 8A
- Low Forward Voltage Drop: Enhances efficiency
- Fast Switching: Minimizes switching losses
- High-Temperature Operation: Suitable for demanding environments
- Compact Module Design: Easy integration in power circuits
Commonly used in solar inverters, EV chargers, and industrial power supplies, it improves performance over traditional silicon diodes.
For detailed specs, refer to the datasheet.
- Voltage/Current Rating: 600V, 8A
- Low Forward Voltage Drop: Enhances efficiency
- Fast Switching: Minimizes switching losses
- High-Temperature Operation: Suitable for demanding environments
- Compact Module Design: Easy integration in power circuits
Commonly used in solar inverters, EV chargers, and industrial power supplies, it improves performance over traditional silicon diodes.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the VS-HFA08TB60-M3 (600V, 8A ultrafast diode) include:
- STTH8R06D (STMicroelectronics)
- FFPF08H60S (ON Semiconductor)
- IDH08G65C5 (Infineon)
- ES1D (600V, 1A, but check current rating for alternatives)
Verify specs (voltage, current, speed) before substitution. For exact matches, consult datasheets or distributors like Digi-Key, Mouser.
- STTH8R06D (STMicroelectronics)
- FFPF08H60S (ON Semiconductor)
- IDH08G65C5 (Infineon)
- ES1D (600V, 1A, but check current rating for alternatives)
Verify specs (voltage, current, speed) before substitution. For exact matches, consult datasheets or distributors like Digi-Key, Mouser.
Manufacturer
The VS-HFA08TB60-M3 is a high-frequency IGBT module manufactured by Vishay Intertechnology, Inc.
Vishay is a globally recognized American manufacturer of discrete semiconductors and passive electronic components, founded in 1962. The company specializes in producing diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors for industries like automotive, industrial, computing, and telecommunications.
Vishay is known for its innovation, reliability, and broad product portfolio, serving diverse high-performance applications. The VS-HFA08TB60-M3 is part of their power semiconductor lineup, designed for high-frequency switching applications.
Vishay is a globally recognized American manufacturer of discrete semiconductors and passive electronic components, founded in 1962. The company specializes in producing diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors for industries like automotive, industrial, computing, and telecommunications.
Vishay is known for its innovation, reliability, and broad product portfolio, serving diverse high-performance applications. The VS-HFA08TB60-M3 is part of their power semiconductor lineup, designed for high-frequency switching applications.
Package
The VS-HFA08TB60-M3 is a TO-247-3L package type. It is a high-power, three-lead (3L) through-hole package commonly used for diodes, transistors, and other power semiconductor devices. The TO-247-3L offers robust thermal and electrical performance, making it suitable for high-current applications.
