規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET™, VIPower™ |
| Part Status | Active |
| Switch Type | General Purpose |
| Number of Outputs | 1 |
| Ratio - Input: Output | 1:1 |
| Output Configuration | Low Side |
| Output Type | N-Channel |
| Interface | On/Off |
| Voltage - Load | 55V (Max) |
| Voltage - Supply (Vcc/Vdd) | Not Required |
| Current - Output (Max) | 25A |
| Rds On (Typ) | 28mOhm (Max) |
| Input Type | Non-Inverting |
| Features | Status Flag |
| Fault Protection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
概述
Description
The VNB35N07TR-E is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in automotive and industrial applications. It is part of the VIPower M0-3 series by STMicroelectronics. This device is designed to provide high efficiency and reliability in switching operations.
Key features of the VNB35N07TR-E include a maximum drain-source voltage (V_DS) of 70V and a continuous drain current (I_D) of 35A. Its low on-resistance (R_DS(on)) minimizes power loss, which makes it suitable for high-efficiency applications. The device also integrates various protection features such as overvoltage, overcurrent, and thermal shutdown, enhancing its robustness and reliability in harsh environments.
Typically, the VNB35N07TR-E is employed in applications requiring efficient power management, such as motor control, power supplies, and DC-DC converters. Its compact package and built-in protection mechanisms make it a popular choice for designers looking to implement efficient, high-performance power switching solutions.
Key features of the VNB35N07TR-E include a maximum drain-source voltage (V_DS) of 70V and a continuous drain current (I_D) of 35A. Its low on-resistance (R_DS(on)) minimizes power loss, which makes it suitable for high-efficiency applications. The device also integrates various protection features such as overvoltage, overcurrent, and thermal shutdown, enhancing its robustness and reliability in harsh environments.
Typically, the VNB35N07TR-E is employed in applications requiring efficient power management, such as motor control, power supplies, and DC-DC converters. Its compact package and built-in protection mechanisms make it a popular choice for designers looking to implement efficient, high-performance power switching solutions.
Equivalent
The VNB35N07TR-E is a power MOSFET by STMicroelectronics. Equivalent products are generally other power MOSFETs with similar specifications. Some potential equivalents include the IRFZ44N by International Rectifier, FQP30N06L by ON Semiconductor, and the NTD4906N by ON Semiconductor. When selecting an equivalent, ensure that the voltage, current, and switching characteristics match the original application's requirements. Always consult datasheets to verify compatibility.
Features
The VNB35N07TR-E is a power MOSFET designed and manufactured by STMicroelectronics. Key features include:
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (Vds) of 70V and a continuous drain current of 35A.
2. Low On-Resistance: It offers low on-state resistance, enhancing efficiency by reducing power loss.
3. Technology: Utilizes advanced PowerMESH™ technology, providing improved switching performance and reliability.
4. Package: Available in a DPAK package, which is suitable for surface-mount applications and offers good thermal performance.
5. Applications: Ideal for use in a variety of applications, such as automotive, industrial, and consumer electronics, where high efficiency and compact size are important.
6. Temperature Range: It can operate in a wide temperature range, ensuring reliability in various environmental conditions.
7. Protection Features: Includes built-in protection features such as over-temperature and over-current protection.
These features make the VNB35N07TR-E suitable for high-performance and space-constrained applications.
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (Vds) of 70V and a continuous drain current of 35A.
2. Low On-Resistance: It offers low on-state resistance, enhancing efficiency by reducing power loss.
3. Technology: Utilizes advanced PowerMESH™ technology, providing improved switching performance and reliability.
4. Package: Available in a DPAK package, which is suitable for surface-mount applications and offers good thermal performance.
5. Applications: Ideal for use in a variety of applications, such as automotive, industrial, and consumer electronics, where high efficiency and compact size are important.
6. Temperature Range: It can operate in a wide temperature range, ensuring reliability in various environmental conditions.
7. Protection Features: Includes built-in protection features such as over-temperature and over-current protection.
These features make the VNB35N07TR-E suitable for high-performance and space-constrained applications.
Pinout
The VNB35N07TR-E is a power MOSFET manufactured by STMicroelectronics. It features a standard DPAK package, which typically has a 3-pin configuration. The pin count and their functions are as follows:
1. Pin 1 (Gate): This is the gate terminal that controls the MOSFET's operation. It is responsible for turning the MOSFET on or off by applying a voltage signal.
2. Pin 2 (Drain): The drain terminal is connected to the load. It is the terminal through which the main current flows when the MOSFET is in the 'on' state.
3. Pin 3 (Source): This is the source terminal, usually connected to ground in many applications. It serves as the return path for the current flowing through the drain.
Additionally, the large metal tab on the package often serves as a heat sink and is electrically connected to the drain, which is important for thermal management. The VNB35N07TR-E is used in various applications requiring efficient switching and power delivery, such as automotive and industrial environments.
1. Pin 1 (Gate): This is the gate terminal that controls the MOSFET's operation. It is responsible for turning the MOSFET on or off by applying a voltage signal.
2. Pin 2 (Drain): The drain terminal is connected to the load. It is the terminal through which the main current flows when the MOSFET is in the 'on' state.
3. Pin 3 (Source): This is the source terminal, usually connected to ground in many applications. It serves as the return path for the current flowing through the drain.
Additionally, the large metal tab on the package often serves as a heat sink and is electrically connected to the drain, which is important for thermal management. The VNB35N07TR-E is used in various applications requiring efficient switching and power delivery, such as automotive and industrial environments.
Manufacturer
The VNB35N07TR-E is manufactured by STMicroelectronics. STMicroelectronics is a leading global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. The company serves a variety of sectors, including automotive, industrial, personal electronics, and communications equipment. Known for its innovation and high-quality products, STMicroelectronics focuses on providing solutions that are used in a wide array of applications, from microcontrollers and sensors to power management and analog ICs. The company is headquartered in Geneva, Switzerland, and operates globally, with numerous research and development, manufacturing, and sales facilities around the world.
Application
The VNB35N07TR-E is a power MOSFET commonly used in automotive and industrial applications. It is well-suited for high-current switching and motor control applications due to its robust design and high efficiency. This component is often employed in the electronic control units (ECUs) of vehicles for managing systems such as power steering, ABS, and other motor-driven loads. Additionally, it can be used in battery management systems and power distribution modules. Its ability to handle high power levels makes it ideal for use in DC-DC converters, solenoid drivers, and lighting control systems.
Package
The VNB35N07TR-E is a power MOSFET from STMicroelectronics, and it comes in a D²PAK (TO-263) package type. This package is designed for surface-mount applications, providing good thermal performance and is suitable for high-current, high-voltage applications.