規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | NPN + PNP |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 50V |
| Resistor - Base(R1) | 10kOhms |
| Resistor - Emitter Base(R2) | 10kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 30 @ 5mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff(Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
概述
Description
"UMD3NFHATR" doesn't appear to correspond to any widely recognized term, concept, or abbreviation as of my last update in October 2023. It might be a specialized acronym, code, or term relevant to a specific field or organization. If you provide more context or details about its usage or the field it pertains to, I could offer a more informed response. Alternatively, it could be a typographical error or a placeholder, in which case clarifying the intended subject or area of interest would be helpful.
Equivalent
The UMD3NFHATR is a dual N-channel MOSFET. Equivalent products can include other dual N-channel MOSFETs with similar voltage, current ratings, and package type. Some possible equivalents could be the BSS123 or the 2N7002, although it's important to verify electrical specifications and package compatibility with your specific application requirements. Always consult the datasheets of potential equivalents to ensure they meet the necessary criteria.
Pinout
The UMD3NFHATR is a dual N-channel MOSFET from ROHM Semiconductor. It has a pin count of 6, as it is housed in a surface-mount SOT-363 package. This component is designed for switching applications, offering efficient performance in small electronic devices due to its compact size and low on-resistance. The pin functions typically include:
1. Drain 1 (D1): Connected to the drain of the first MOSFET.
2. Gate 1 (G1): Controls the first MOSFET.
3. Source 2 (S2): Connected to the source of the second MOSFET.
4. Drain 2 (D2): Connected to the drain of the second MOSFET.
5. Gate 2 (G2): Controls the second MOSFET.
6. Source 1 (S1): Connected to the source of the first MOSFET.
The MOSFETs are used for applications requiring load switching, DC-DC conversion, and power management in portable devices. Always refer to the datasheet for precise specifications and to ensure the component meets your design requirements.
1. Drain 1 (D1): Connected to the drain of the first MOSFET.
2. Gate 1 (G1): Controls the first MOSFET.
3. Source 2 (S2): Connected to the source of the second MOSFET.
4. Drain 2 (D2): Connected to the drain of the second MOSFET.
5. Gate 2 (G2): Controls the second MOSFET.
6. Source 1 (S1): Connected to the source of the first MOSFET.
The MOSFETs are used for applications requiring load switching, DC-DC conversion, and power management in portable devices. Always refer to the datasheet for precise specifications and to ensure the component meets your design requirements.
Manufacturer
The UMD3NFHATR is manufactured by ROHM Semiconductor. ROHM is a Japanese company that specializes in the design and manufacturing of electronic components. Founded in 1958 and headquartered in Kyoto, Japan, ROHM produces a wide range of products, including semiconductors, integrated circuits, and other electronic components used in various applications across industries such as automotive, consumer electronics, telecommunications, and industrial equipment. The company is known for its focus on innovation and quality, providing solutions that enhance the performance and efficiency of electronic devices.
