TPH3208LSG

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TPH3208LSG

+物料清單

GANFET N-CH 650V 20A 3PQFN

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90-日售後保障

正品保證

規格

屬性 價值
Supplier Transphorm
Package / Case Tube
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 20A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 130mOhm @ 14A, 8V
Vgs(th)(Max) @ Id 2.6V @ 300µA
Gate Charge(Qg)(Max) @ Vgs 42 nC @ 8 V
Vgs(Max) ±18V
Input Capacitance(Ciss)(Max) @ Vds 760 pF @ 400 V
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)