規格
| 屬性 | 價值 |
| Package / Case | Tray |
| Series | Benand™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 2Gb (256M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
The TC58BVG1S3HTAI0 is a NAND flash memory chip produced by Toshiba, now part of Kioxia. It is commonly used in various electronic devices for data storage due to its non-volatile nature, meaning it retains information even when the power is off. This specific model belongs to a family of single-level cell (SLC) NAND flash, which is known for its reliability, speed, and durability compared to multi-level cell (MLC) or triple-level cell (TLC) alternatives.
Key features of the TC58BVG1S3HTAI0 include its high-speed read/write capabilities and endurance, making it suitable for applications requiring frequent data access and updates, such as industrial equipment, consumer electronics, and automotive systems. Its compact form factor and energy efficiency also make it ideal for mobile and portable devices. Additionally, the chip supports advanced error correction and wear leveling techniques to enhance data integrity and prolong lifespan. Overall, the TC58BVG1S3HTAI0 is designed to provide robust storage solutions across a variety of applications.
Key features of the TC58BVG1S3HTAI0 include its high-speed read/write capabilities and endurance, making it suitable for applications requiring frequent data access and updates, such as industrial equipment, consumer electronics, and automotive systems. Its compact form factor and energy efficiency also make it ideal for mobile and portable devices. Additionally, the chip supports advanced error correction and wear leveling techniques to enhance data integrity and prolong lifespan. Overall, the TC58BVG1S3HTAI0 is designed to provide robust storage solutions across a variety of applications.
Equivalent
The TC58BVG1S3HTAI0 is a NAND flash memory chip produced by Toshiba. Equivalent products from other manufacturers could include:
1. Samsung K9F1G08U0C
2. Micron MT29F1G08ABADA
3. Hynix HY27UF081G2M
4. Intel JS29F16B08JAM
These alternatives offer similar specifications and functionality, though it is important to verify compatibility with your specific application.
1. Samsung K9F1G08U0C
2. Micron MT29F1G08ABADA
3. Hynix HY27UF081G2M
4. Intel JS29F16B08JAM
These alternatives offer similar specifications and functionality, though it is important to verify compatibility with your specific application.
Features
The TC58BVG1S3HTAI0 is a NAND Flash memory chip manufactured by Toshiba. It is designed for use in a variety of digital devices that require reliable data storage. Key features include:
1. Type: SLC (Single-Level Cell) NAND Flash, which offers better endurance and reliability compared to MLC (Multi-Level Cell) types.
2. Capacity: Typically available in capacities ranging from 1Gb to 8Gb, suitable for embedded systems and consumer electronics.
3. Interface: Parallel interface, which is common for NAND Flash memory and allows for efficient data transfer.
4. Voltage: Operates at a power supply voltage of 3.3V, making it compatible with many electronic devices.
5. Endurance: High endurance with a typical write/erase cycle of 100,000 times, ensuring longevity in data writing and erasing operations.
6. Package Type: Available in a TSOP (Thin Small Outline Package), which is compact and easy to integrate into various circuit boards.
7. Temperature Range: Suitable for industrial and consumer applications with an operating temperature range from -40°C to +85°C.
This makes the TC58BVG1S3HTAI0 ideal for use in applications where data integrity and longevity are crucial.
1. Type: SLC (Single-Level Cell) NAND Flash, which offers better endurance and reliability compared to MLC (Multi-Level Cell) types.
2. Capacity: Typically available in capacities ranging from 1Gb to 8Gb, suitable for embedded systems and consumer electronics.
3. Interface: Parallel interface, which is common for NAND Flash memory and allows for efficient data transfer.
4. Voltage: Operates at a power supply voltage of 3.3V, making it compatible with many electronic devices.
5. Endurance: High endurance with a typical write/erase cycle of 100,000 times, ensuring longevity in data writing and erasing operations.
6. Package Type: Available in a TSOP (Thin Small Outline Package), which is compact and easy to integrate into various circuit boards.
7. Temperature Range: Suitable for industrial and consumer applications with an operating temperature range from -40°C to +85°C.
This makes the TC58BVG1S3HTAI0 ideal for use in applications where data integrity and longevity are crucial.
Pinout
The TC58BVG1S3HTAI0 is a NAND flash memory chip produced by Toshiba. It features a 48-pin package. This specific model is known for being part of Toshiba's SLC (Single Level Cell) NAND lineup, which typically provides higher endurance and reliability compared to MLC (Multi-Level Cell) flash.
In terms of functionality, the TC58BVG1S3HTAI0 is used for data storage in various electronic devices. It interfaces with a host controller to perform read, write, and erase operations. The chip is organized in a way that allows it to store 1 bit of data per cell, providing robustness for applications that require frequent data rewriting.
The primary functions of the pins include power supply, ground, command latch, address latch, chip enable, read enable, write enable, and I/O ports for data transfer. These pins work together to facilitate communication between the NAND flash memory and the controlling device, enabling efficient data storage and retrieval processes.
In terms of functionality, the TC58BVG1S3HTAI0 is used for data storage in various electronic devices. It interfaces with a host controller to perform read, write, and erase operations. The chip is organized in a way that allows it to store 1 bit of data per cell, providing robustness for applications that require frequent data rewriting.
The primary functions of the pins include power supply, ground, command latch, address latch, chip enable, read enable, write enable, and I/O ports for data transfer. These pins work together to facilitate communication between the NAND flash memory and the controlling device, enabling efficient data storage and retrieval processes.
Manufacturer
The TC58BVG1S3HTAI0 is manufactured by Toshiba Corporation. Toshiba is a multinational conglomerate headquartered in Tokyo, Japan. The company operates in various sectors, including electronics, energy, social infrastructure, and storage. Toshiba is known for its technology and electronics products, such as semiconductors, storage devices, and consumer electronics. The company has a long history and is recognized for its innovation and contributions to the advancement of technology.
Application
The TC58BVG1S3HTAI0 is a NAND flash memory chip. Its application areas include data storage solutions in consumer electronics, such as digital cameras, smartphones, and tablets. It is also used in industrial devices requiring reliable non-volatile memory, like medical equipment, automotive systems, and embedded applications. Furthermore, it serves as a vital component in solid-state drives (SSDs), USB flash drives, and memory cards. Its high-density storage capability makes it suitable for applications needing substantial data retention and rapid access times, such as data logging and backup systems.
Package
The TC58BVG1S3HTAI0 is a NAND flash memory chip from Toshiba (now Kioxia). It typically comes in a TSOP (Thin Small Outline Package) type 1, which is a common package for such memory chips, allowing for a compact form factor suitable for various electronic applications.
