規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 110A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.9mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 345 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 11400 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²Pak) |
概述
Description
The SUM110P06-07L-E3 is a Schottky barrier diode designed for high-efficiency rectification in power applications. Key features include:
- Low forward voltage drop (Vf): Enhances energy efficiency.
- High current capability (6A): Suitable for power circuits.
- Fast switching speed: Reduces switching losses.
- Low reverse leakage: Improves thermal performance.
Commonly used in DC-DC converters, power supplies, and reverse polarity protection, it operates within a temperature range of -65°C to +150°C. The TO-277B (SMB Flat Lead) package ensures compact PCB mounting.
This diode is ideal for applications requiring high efficiency, thermal stability, and compact design.
- Low forward voltage drop (Vf): Enhances energy efficiency.
- High current capability (6A): Suitable for power circuits.
- Fast switching speed: Reduces switching losses.
- Low reverse leakage: Improves thermal performance.
Commonly used in DC-DC converters, power supplies, and reverse polarity protection, it operates within a temperature range of -65°C to +150°C. The TO-277B (SMB Flat Lead) package ensures compact PCB mounting.
This diode is ideal for applications requiring high efficiency, thermal stability, and compact design.
Equivalent
Equivalent products to the SUM110P06-07L-E3 (a P-channel MOSFET) include:
- IRF9Z34N (Vishay)
- FQP27P06 (Fairchild/ON Semi)
- STP27P6F6 (STMicroelectronics)
- AOD4185 (Alpha & Omega)
These alternatives offer similar specifications (e.g., -60V, -110A, RDS(on) ~7mΩ). Verify compatibility for your application.
- IRF9Z34N (Vishay)
- FQP27P06 (Fairchild/ON Semi)
- STP27P6F6 (STMicroelectronics)
- AOD4185 (Alpha & Omega)
These alternatives offer similar specifications (e.g., -60V, -110A, RDS(on) ~7mΩ). Verify compatibility for your application.
Features
The SUM110P06-07L-E3 is a Schottky diode with the following key features:
- Low Forward Voltage Drop (VF): Typically 0.55V at 5A, ensuring high efficiency.
- High Current Rating: 10A average forward current.
- Fast Switching: Schottky design minimizes reverse recovery time, ideal for high-frequency applications.
- Low Power Loss: Optimized for energy-efficient circuits.
- High Surge Capability: Withstands peak currents up to 150A.
- Compact Package: TO-220AB for easy mounting and heat dissipation.
- Wide Operating Temperature: -65°C to +175°C for robust performance.
Commonly used in power supplies, converters, and reverse polarity protection.
- Low Forward Voltage Drop (VF): Typically 0.55V at 5A, ensuring high efficiency.
- High Current Rating: 10A average forward current.
- Fast Switching: Schottky design minimizes reverse recovery time, ideal for high-frequency applications.
- Low Power Loss: Optimized for energy-efficient circuits.
- High Surge Capability: Withstands peak currents up to 150A.
- Compact Package: TO-220AB for easy mounting and heat dissipation.
- Wide Operating Temperature: -65°C to +175°C for robust performance.
Commonly used in power supplies, converters, and reverse polarity protection.
Pinout
The SUM110P06-07L-E3 is a 7-pin power MOSFET in a TO-252 (DPAK) package.
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D) – Connected to the load (high-current terminal).
3. Source (S) – Ground/reference terminal (also tied to the tab).
Key Features:
- N-channel MOSFET
- 60V, 110A max ratings
- Low RDS(on) for efficient power handling
The tab is typically the Source pin, aiding in heat dissipation.
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D) – Connected to the load (high-current terminal).
3. Source (S) – Ground/reference terminal (also tied to the tab).
Key Features:
- N-channel MOSFET
- 60V, 110A max ratings
- Low RDS(on) for efficient power handling
The tab is typically the Source pin, aiding in heat dissipation.
Manufacturer
The SUM110P06-07L-E3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components. Vishay specializes in producing high-performance discrete semiconductors (diodes, MOSFETs, optoelectronics) and passive components (resistors, capacitors, inductors). Founded in 1962 and headquartered in Pennsylvania, USA, Vishay is known for innovation, reliability, and serving industries like automotive, industrial, computing, and consumer electronics. The SUM110P06-07L-E3 is a power MOSFET designed for efficient power management applications.
Package
The SUM110P06-07L-E3 is a power MOSFET in a TO-263-3 (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance and a compact footprint. It is commonly used in switching power supplies, motor control, and other high-current circuits. The "E3" suffix typically indicates RoHS compliance and specific manufacturing details.
