STW50N65DM2AG

圖片僅供參考

STW50N65DM2AG

+物料清單

MOSFET N-CH 650V 28A TO247

  • 製造商意法半導體

  • 製造商部分 #STW50N65DM2AG

  • 有存貨3010

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Series MDmesh™ DM2
PartStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 28A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 87mOhm @ 19A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 3200 pF @ 100 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
MountingType Through Hole
SupplierDevicePackage TO-247-3
Package/Case TO-247-3
BaseProductNumber STW50

概述

Description

The STW50N65DM2AG is a high-performance N-channel power MOSFET designed for applications requiring efficient switching and low conduction losses. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 50A, making it suitable for high-voltage applications such as power supplies, motor drives, and solar inverters.
With a low R_DS(on) of 0.06Ω, it minimizes power loss during operation, enhancing overall efficiency. The MOSFET is optimized for fast switching, which is crucial for minimizing heat generation and improving thermal management in power electronic circuits.
The device is housed in a TO-220 package, facilitating easy heat dissipation and PCB mounting. Additionally, it has built-in gate protection features, enhancing reliability in various operational environments. Overall, the STW50N65DM2AG is an ideal choice for engineers looking for robust performance in demanding applications.

Equivalent

The STW50N65DM2AG is a N-channel MOSFET with a breakdown voltage of 650V and a continuous current rating of 50A. Equivalent products include the Infineon IPP50R650P6, ON Semiconductor NTP65N65, and Vishay SiHG65N65E. Always verify specifications such as R_DS(on), gate threshold voltage, and package type before substitution.

Features

The STW50N65DM2AG is an N-channel MOSFET designed for high efficiency and performance in power applications. Key features include:
1. Voltage Rating: 650V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: 50A continuous drain current, allowing for substantial load handling.
3. RDS(on): Low on-resistance (0.085Ω) minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: 2V to 4V, enabling operation with lower gate drive voltages.
5. Thermal Performance: High junction temperature (up to 175°C) and efficient thermal dissipation.
6. Package Type: Available in TO-220 and DPAK packages, facilitating easy integration into various designs.
7. Fast Switching: High-speed switching capabilities improve overall circuit performance, suitable for applications in switch-mode power supplies and DC-DC converters.
8. Robustness: Designed with avalanche rating and built-in protection against thermal runaway.
These features make the STW50N65DM2AG ideal for industrial, automotive, and consumer electronics applications.

Pinout

The STW50N65DM2AG is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load in a typical application.
3. Source (S): This is the output pin where the current exits the MOSFET, typically connected to ground or the negative side of the power supply.
The STW50N65DM2AG is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 50A. Its low on-resistance makes it suitable for power conversion and switching applications.

Manufacturer

The STW50N65DM2AG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, and manufacture of a wide range of semiconductor products, including integrated circuits, discrete devices, and sensors. They serve various markets, including automotive, industrial, personal electronics, and telecommunications.
Headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability, focusing on technologies that enable energy efficiency, connectivity, and smart applications. The company plays a significant role in advancing the Internet of Things (IoT), automotive safety, and power management solutions, making it a key player in the global semiconductor industry. STMicroelectronics operates worldwide, serving customers in over 35 countries and employing thousands of people in research, design, and manufacturing.

Application

The STW50N65DM2AG is a N-channel MOSFET designed for high-performance applications. Key application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Employed in motor drivers for industrial and automotive applications.
3. DC-DC Converters: Ideal for buck, boost, and buck-boost converters.
4. Inverters: Utilized in renewable energy systems and uninterruptible power supplies (UPS).
5. Lighting: Suitable for LED lighting drivers requiring high efficiency and fast switching.
Overall, it is favored for its high voltage and current capabilities, making it versatile in various electronic circuits.

Package

The STW50N65DM2AG is packaged in a TO-247 format, which is a molded plastic package used for high-power applications. This package type provides excellent thermal performance and is suitable for mounting on heatsinks.

與STW50N65DM2AG相關的產品