規格
| 屬性 | 價值 |
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 400mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 43.6 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1630 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概述
Description
The STW11NM80 is an N-channel power MOSFET from STMicroelectronics, designed for high-voltage applications. Key features include:
- Voltage Rating: 800V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (max)
- Fast Switching: Suitable for high-efficiency power conversion
- Package: TO-247 (through-hole, robust thermal performance)
Commonly used in:
- Switched-mode power supplies (SMPS)
- Motor drives
- Inverters & industrial applications
Its high voltage tolerance and low conduction losses make it ideal for demanding power electronics. Always refer to the datasheet for detailed specs and thermal considerations.
- Voltage Rating: 800V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (max)
- Fast Switching: Suitable for high-efficiency power conversion
- Package: TO-247 (through-hole, robust thermal performance)
Commonly used in:
- Switched-mode power supplies (SMPS)
- Motor drives
- Inverters & industrial applications
Its high voltage tolerance and low conduction losses make it ideal for demanding power electronics. Always refer to the datasheet for detailed specs and thermal considerations.
Equivalent
Equivalent products to the STW11NM80 (800V, 11A, N-channel MOSFET) include:
- IRF840 (500V, 8A) – Lower voltage but common substitute.
- STP11NK80Z (800V, 11A) – Similar specs, same manufacturer (STMicroelectronics).
- FQP11N80C (800V, 11A) – Fairchild alternative.
- IXFH11N80 (800V, 11A) – IXYS equivalent.
Check datasheets for exact compatibility in your circuit.
- IRF840 (500V, 8A) – Lower voltage but common substitute.
- STP11NK80Z (800V, 11A) – Similar specs, same manufacturer (STMicroelectronics).
- FQP11N80C (800V, 11A) – Fairchild alternative.
- IXFH11N80 (800V, 11A) – IXYS equivalent.
Check datasheets for exact compatibility in your circuit.
Features
The STW11NM80 is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (max)
- Fast Switching: Low gate charge (Q_g) and output capacitance (C_oss) for efficient performance
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-247 (through-hole, high-power handling)
- Applications: Suitable for switching power supplies, motor drives, and inverters
This MOSFET is designed for high-voltage, high-efficiency applications with reliable thermal performance.
- Voltage Rating: 800V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (max)
- Fast Switching: Low gate charge (Q_g) and output capacitance (C_oss) for efficient performance
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-247 (through-hole, high-power handling)
- Applications: Suitable for switching power supplies, motor drives, and inverters
This MOSFET is designed for high-voltage, high-efficiency applications with reliable thermal performance.
Pinout
The STW11NM80 is an N-channel MOSFET with 3 pins (TO-247 package):
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage terminal (800V max).
3. Source (S) – Ground/reference terminal.
Key Features:
- 800V drain-source voltage (VDS).
- 11A continuous drain current (ID).
- Low on-resistance (RDS(on) ~ 0.65Ω).
- Suitable for high-power switching (e.g., SMPS, inverters).
Concise and functional summary.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage terminal (800V max).
3. Source (S) – Ground/reference terminal.
Key Features:
- 800V drain-source voltage (VDS).
- 11A continuous drain current (ID).
- Low on-resistance (RDS(on) ~ 0.65Ω).
- Suitable for high-power switching (e.g., SMPS, inverters).
Concise and functional summary.
Manufacturer
The STW11NM80 is a power MOSFET manufactured by STMicroelectronics, a multinational semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power management ICs, and discrete components like MOSFETs. The company serves industries such as automotive, industrial, consumer electronics, and IoT. Known for innovation and reliability, STMicroelectronics is a key player in the global semiconductor market. The STW11NM80 is part of their high-voltage power MOSFET lineup, commonly used in switching applications.
Package
The STW11NM80 is an N-channel MOSFET in a TO-247 package. This package type is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It offers excellent thermal performance and is commonly used in switching and amplification circuits.
