規格
| 屬性 | 價值 |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 900mOhm @ 4.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 72 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2180 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概述
Description
The STW10NK80Z is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. Manufactured by STMicroelectronics, it features a maximum drain-source voltage (V_ds) of 800V and a continuous drain current (I_d) of 9.2A. The MOSFET is part of the MDmesh™ series, known for low on-resistance and fast switching speeds, which enhance efficiency in power applications.
Key features include low gate charge, high-speed switching capability, and robust avalanche performance, making it suitable for switching power supplies, power factor correction, and lighting applications. The device is housed in a TO-247 package, which allows for better thermal management due to its larger surface area for heat dissipation.
Overall, the STW10NK80Z offers reliability and performance in demanding high-voltage environments, making it a popular choice for engineers designing power electronic systems.
Key features include low gate charge, high-speed switching capability, and robust avalanche performance, making it suitable for switching power supplies, power factor correction, and lighting applications. The device is housed in a TO-247 package, which allows for better thermal management due to its larger surface area for heat dissipation.
Overall, the STW10NK80Z offers reliability and performance in demanding high-voltage environments, making it a popular choice for engineers designing power electronic systems.
Equivalent
The STW10NK80Z is a power MOSFET from STMicroelectronics. Equivalent products include:
1. IRF840 from Vishay
2. FQP6N80 from Fairchild Semiconductor/ON Semiconductor
3. NTE2973 from NTE Electronics
4. FDP5N80 from Fairchild Semiconductor/ON Semiconductor
Ensure to cross-reference datasheets for compatibility in terms of voltage, current, and power ratings.
1. IRF840 from Vishay
2. FQP6N80 from Fairchild Semiconductor/ON Semiconductor
3. NTE2973 from NTE Electronics
4. FDP5N80 from Fairchild Semiconductor/ON Semiconductor
Ensure to cross-reference datasheets for compatibility in terms of voltage, current, and power ratings.
Features
The STW10NK80Z is an N-channel Power MOSFET designed primarily for high voltage and high speed switching applications. Key features of this MOSFET include:
1. Drain-Source Voltage (V_DS): Rated up to 800V, making it suitable for high voltage applications.
2. Continuous Drain Current (I_D): Capable of handling up to 8.5A, allowing it to manage moderate power levels.
3. On-State Resistance (R_DS(on)): Low R_DS(on) of approximately 0.85 ohms, ensuring efficient current flow and reduced power loss.
4. Fast Switching Speed: Its design supports high-speed operations, beneficial for switching converters and power supplies.
5. Zener-Protected: Integrated Zener diode for enhanced ESD protection and greater reliability.
6. Package Type: Available in a TO-247 package, which provides effective heat dissipation and ease of mounting.
7. Applications: Commonly used in SMPS, motor control, lighting circuits, and other power management applications.
These features make the STW10NK80Z a versatile and efficient choice for designers working with high voltage and high current systems.
1. Drain-Source Voltage (V_DS): Rated up to 800V, making it suitable for high voltage applications.
2. Continuous Drain Current (I_D): Capable of handling up to 8.5A, allowing it to manage moderate power levels.
3. On-State Resistance (R_DS(on)): Low R_DS(on) of approximately 0.85 ohms, ensuring efficient current flow and reduced power loss.
4. Fast Switching Speed: Its design supports high-speed operations, beneficial for switching converters and power supplies.
5. Zener-Protected: Integrated Zener diode for enhanced ESD protection and greater reliability.
6. Package Type: Available in a TO-247 package, which provides effective heat dissipation and ease of mounting.
7. Applications: Commonly used in SMPS, motor control, lighting circuits, and other power management applications.
These features make the STW10NK80Z a versatile and efficient choice for designers working with high voltage and high current systems.
Pinout
The STW10NK80Z is an N-channel MOSFET with a TO-247 package. It typically has three pins:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET.
3. Source (S): The source is the terminal through which the main current exits the MOSFET.
This device is designed for high voltage and high power applications, with a voltage rating of 800V and a current rating of 10A. It is often used in power supply, motor control, and other high-efficiency applications due to its low on-resistance and fast switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET.
3. Source (S): The source is the terminal through which the main current exits the MOSFET.
This device is designed for high voltage and high power applications, with a voltage rating of 800V and a current rating of 10A. It is often used in power supply, motor control, and other high-efficiency applications due to its low on-resistance and fast switching capabilities.
Manufacturer
The STW10NK80Z is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company serves various sectors, including automotive, industrial, personal electronics, communication equipment, and computer peripherals. It is known for producing microcontrollers, sensors, power semiconductors, and analog and digital integrated circuits, among other components. STMicroelectronics operates globally and is recognized for its innovation and contributions to advancing technology in various industries.
Application
The STW10NK80Z is a power MOSFET designed for high-voltage applications. Its key application areas include:
1. Switch Mode Power Supplies (SMPS): Used in power supplies for improved efficiency and compact design.
2. Power Factor Correction (PFC): Enhances power factor in electronic devices.
3. Motor Control: Suitable for driving motors in industrial and consumer electronics.
4. Lighting: Used in LED drivers and electronic ballasts for high-efficiency lighting solutions.
5. Inverters: Employed in various inverter systems, including solar inverters and UPS systems.
6. Telecommunication Equipment: Ensures efficient power management in telecom networks.
These applications leverage the MOSFET's high voltage capacity and efficiency.
1. Switch Mode Power Supplies (SMPS): Used in power supplies for improved efficiency and compact design.
2. Power Factor Correction (PFC): Enhances power factor in electronic devices.
3. Motor Control: Suitable for driving motors in industrial and consumer electronics.
4. Lighting: Used in LED drivers and electronic ballasts for high-efficiency lighting solutions.
5. Inverters: Employed in various inverter systems, including solar inverters and UPS systems.
6. Telecommunication Equipment: Ensures efficient power management in telecom networks.
These applications leverage the MOSFET's high voltage capacity and efficiency.
Package
The STW10NK80Z is a MOSFET transistor housed in a TO-247 package. This type of package is designed for high-power applications and provides efficient heat dissipation.
