規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Capacitance @ Vr F | 200pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
概述
Description
The STPSC4H065B-TR is a silicon carbide (SiC) power Schottky diode designed for high-performance applications. Its key features include a forward current rating of 4A and a reverse voltage capability of 650V. This diode offers low forward voltage drop and minimal reverse recovery time, enhancing efficiency and reducing power losses in power conversion systems.
Silicon carbide technology allows it to operate at higher temperatures and frequencies compared to traditional silicon diodes, making it suitable for demanding environments and applications such as power supplies, inverters, and motor drives. Its TO-220AC package provides ease of integration into various electronic designs.
The STPSC4H065B-TR’s robust performance in high-temperature operations and high-frequency switching makes it an excellent choice for improving the efficiency and compactness of power electronic systems. Its thermal performance and reliability also make it appealing for applications aiming for compact and efficient energy use.
Silicon carbide technology allows it to operate at higher temperatures and frequencies compared to traditional silicon diodes, making it suitable for demanding environments and applications such as power supplies, inverters, and motor drives. Its TO-220AC package provides ease of integration into various electronic designs.
The STPSC4H065B-TR’s robust performance in high-temperature operations and high-frequency switching makes it an excellent choice for improving the efficiency and compactness of power electronic systems. Its thermal performance and reliability also make it appealing for applications aiming for compact and efficient energy use.
Equivalent
The STPSC4H065B-TR is a 4A, 650V silicon carbide Schottky diode by STMicroelectronics. Equivalent products include:
1. Cree (Wolfspeed) C4D05120A - 5A, 1200V SiC Schottky diode
2. ROHM SCS206AGC - 5A, 650V SiC Schottky diode
3. ON Semiconductor (now onsemi) FFSP3065B - 3A, 650V SiC Schottky diode
These components may vary slightly in ratings; ensure compatibility before substitution.
1. Cree (Wolfspeed) C4D05120A - 5A, 1200V SiC Schottky diode
2. ROHM SCS206AGC - 5A, 650V SiC Schottky diode
3. ON Semiconductor (now onsemi) FFSP3065B - 3A, 650V SiC Schottky diode
These components may vary slightly in ratings; ensure compatibility before substitution.
Features
The STPSC4H065B-TR is a silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. Key features include:
1. High Efficiency: Due to its SiC technology, it offers low forward voltage drop and reduced energy losses, enhancing overall efficiency in power applications.
2. High Temperature Performance: The diode can operate at junction temperatures up to 175°C, making it suitable for high-temperature environments.
3. Fast Recovery Time: It exhibits negligible reverse recovery time, which is ideal for high-frequency switching applications.
4. Robustness: The device provides high surge current capability and excellent thermal stability, ensuring reliability in demanding conditions.
5. Low Reverse Leakage Current: It features reduced leakage current, improving performance in high-voltage applications.
6. Package: The diode is available in a D²PAK package, which facilitates efficient thermal management and compact design.
7. Applications: It is commonly used in power factor correction (PFC), solar inverters, industrial power supplies, and electric vehicle (EV) chargers.
These features make the STPSC4H065B-TR suitable for enhancing efficiency and reliability in a variety of power electronics applications.
1. High Efficiency: Due to its SiC technology, it offers low forward voltage drop and reduced energy losses, enhancing overall efficiency in power applications.
2. High Temperature Performance: The diode can operate at junction temperatures up to 175°C, making it suitable for high-temperature environments.
3. Fast Recovery Time: It exhibits negligible reverse recovery time, which is ideal for high-frequency switching applications.
4. Robustness: The device provides high surge current capability and excellent thermal stability, ensuring reliability in demanding conditions.
5. Low Reverse Leakage Current: It features reduced leakage current, improving performance in high-voltage applications.
6. Package: The diode is available in a D²PAK package, which facilitates efficient thermal management and compact design.
7. Applications: It is commonly used in power factor correction (PFC), solar inverters, industrial power supplies, and electric vehicle (EV) chargers.
These features make the STPSC4H065B-TR suitable for enhancing efficiency and reliability in a variety of power electronics applications.
Pinout
The STPSC4H065B-TR is a silicon carbide power Schottky diode manufactured by STMicroelectronics. This device is commonly used for high efficiency and high power density applications due to its fast switching and high temperature capability.
In terms of pin count and packaging, the STPSC4H065B-TR is provided in a TO-252 (DPAK) package, which typically has three pins. The standard pin configuration for a DPAK package is as follows:
1. Anode: This is the input terminal where the current enters the diode.
2. Cathode: This is the output terminal where the current exits the diode.
3. Cathode Tab: This is connected to the cathode and serves as a heat sink for thermal management.
The primary function of the STPSC4H065B-TR is to provide rectification in power conversion applications, offering benefits such as reduced switching losses and enhanced efficiency compared to traditional silicon diodes.
In terms of pin count and packaging, the STPSC4H065B-TR is provided in a TO-252 (DPAK) package, which typically has three pins. The standard pin configuration for a DPAK package is as follows:
1. Anode: This is the input terminal where the current enters the diode.
2. Cathode: This is the output terminal where the current exits the diode.
3. Cathode Tab: This is connected to the cathode and serves as a heat sink for thermal management.
The primary function of the STPSC4H065B-TR is to provide rectification in power conversion applications, offering benefits such as reduced switching losses and enhanced efficiency compared to traditional silicon diodes.
Manufacturer
The STPSC4H065B-TR is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. The company serves various sectors, including automotive, industrial, personal electronics, communications equipment, and computer peripherals. Headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation and leadership in the semiconductor industry, focusing on areas such as energy efficiency, connectivity, and smart technologies.
Application
The STPSC4H065B-TR is a 650V, 4A silicon carbide (SiC) Schottky diode, which is used in various applications requiring high efficiency and fast switching. Key application areas include power factor correction (PFC) circuits, switch-mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), motor drives, and automotive power systems. Its properties make it ideal for improving energy efficiency and reducing thermal management requirements in high-frequency and high-temperature environments.
Package
The STPSC4H065B-TR is a semiconductor component packaged in a DPAK (TO-252) form. This package type is designed for surface mounting on printed circuit boards, providing a compact and efficient solution for electronic applications.
