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STP120NF10
+物料清單MOSFET N-CH 100V 110A TO220AB
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製造商意法半導體
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製造商部分 #STP120NF10
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規格
| 屬性 | 價值 |
| Series | STripFET™ II |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 10.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 233 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5200 pF @ 25 V |
| PowerDissipation(Max) | 312W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP120 |
概述
Description
The device has a fast switching speed, making it suitable for high-frequency applications. It is commonly used in power supplies, motor drives, and DC-DC converters. The STP120NF10 is housed in a TO-220 package, which facilitates effective thermal dissipation.
Key parameters include a gate threshold voltage (V_GS(th)) of 2-4V, ensuring it activates with common gate drive voltages. Overall, the STP120NF10 is favored for its robustness, efficiency, and versatility in electronic designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 120A, providing robust performance for demanding tasks.
3. R_DS(on): Offers a low on-resistance of about 0.010Ω, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring it can be driven by standard logic levels.
5. Fast Switching Speed: It has a fast switching capability, making it suitable for applications like power supplies and motor control.
6. Package: Typically available in TO-220 and DPAK packages, facilitating heat dissipation.
7. Applications: Ideal for use in power converters, inverters, and other high-efficiency applications.
These features make the STP120NF10 a versatile choice for various electronic designs.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin connects to the ground or the negative side of the power supply. Current exits through this pin when the MOSFET is conducting.
This MOSFET is designed for applications such as power management, switching, and inverters, capable of handling high voltages and currents.
Manufacturer
STMicroelectronics is known for its commitment to innovation and sustainability, investing significantly in research and development to create advanced technologies that enhance electronic systems' performance and efficiency. The STP120NF10 itself is an N-channel MOSFET, designed for high-efficiency applications, making it suitable for power management in various electronic devices. Overall, STMicroelectronics is recognized as a leader in the semiconductor industry, with a strong focus on delivering high-quality products, fostering collaborations, and enabling the digital transformation of industries.
Application
1. Switching Power Supplies: Used as a switching element in DC-DC converters.
2. Motor Control: Employed in motor driver circuits for robotics and industrial automation.
3. Load Switching: Acts as a switch for controlling loads in consumer electronics and lighting systems.
4. Power Amplifiers: Utilized in audio amplifiers for efficient signal amplification.
5. Battery Management Systems: Helps in efficiently managing battery charge and discharge cycles.
These applications leverage its efficiency and thermal performance.