規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 250mA (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 16Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 7.7 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 160 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
概述
Description
The STN1NK80Z is an N-channel power MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: 800V, suitable for high-voltage circuits.
- Current Handling: Up to 1A (continuous drain current).
- Low On-Resistance (RDS(on)): ~10Ω (typical), improving efficiency.
- Fast Switching: Optimized for power supply and switching applications.
- Package: TO-252 (DPAK), offering good thermal performance.
Commonly used in AC-DC converters, offline power supplies, and motor control, it provides reliable performance in demanding environments. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: 800V, suitable for high-voltage circuits.
- Current Handling: Up to 1A (continuous drain current).
- Low On-Resistance (RDS(on)): ~10Ω (typical), improving efficiency.
- Fast Switching: Optimized for power supply and switching applications.
- Package: TO-252 (DPAK), offering good thermal performance.
Commonly used in AC-DC converters, offline power supplies, and motor control, it provides reliable performance in demanding environments. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
Equivalent products to the STN1NK80Z (N-channel MOSFET, 800V, 1A) include:
- STP1NK80Z (similar specs, TO-220 package)
- IRF820 (500V, 2.5A, common alternative)
- 2N7000 (60V, 0.2A, for lower voltage)
- STW1NK80 (higher power variant)
Check datasheets for exact compatibility in your circuit.
- STP1NK80Z (similar specs, TO-220 package)
- IRF820 (500V, 2.5A, common alternative)
- 2N7000 (60V, 0.2A, for lower voltage)
- STW1NK80 (higher power variant)
Check datasheets for exact compatibility in your circuit.
Features
The STN1NK80Z is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 1A continuous drain current (ID).
- Low On-Resistance: 12Ω (typical) at 10V gate drive (RDS(on)), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Avalanche Energy Rated: Robust against inductive load spikes.
- Package: TO-252 (DPAK), offering good thermal performance.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
Ideal for power supplies, lighting, and motor control.
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 1A continuous drain current (ID).
- Low On-Resistance: 12Ω (typical) at 10V gate drive (RDS(on)), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Avalanche Energy Rated: Robust against inductive load spikes.
- Package: TO-252 (DPAK), offering good thermal performance.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
Ideal for power supplies, lighting, and motor control.
Package
The STN1NK80Z is a TO-262 (TO-262-3, I2PAK) package type. It is a surface-mount power MOSFET with three leads, designed for high-efficiency switching applications. The package offers good thermal performance and is commonly used in power supplies and motor control circuits.
