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STI33N60M6
+物料清單MOSFET N-CH 600V 25A I2PAK
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製造商意法半導體
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製造商部分 #STI33N60M6
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規格
| 屬性 | 價值 |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ M6 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 25A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 125mOhm @ 12.5A, 10V |
| Vgs(th)(Max)@Id | 4.75V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33.4 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1515 pF @ 100 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | I2PAK (TO-262) |
