規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 30 A |
| Current - Collector Pulsed(Icm) | 60 A |
| Vce(on)(Max) @ Vge Ic | 2.6V @ 15V, 15A |
| Power - Max | 259 W |
| Switching Energy | 380µJ (on), 370µJ (off) |
| Input Type | Standard |
| Gate Charge | 67 nC |
| Td(on / off) @ 25°C | 23ns/111ns |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 231 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
概述
Description
The STGWA15H120DF2 is a 15A, 1200V silicon carbide (SiC) MOSFET from STMicroelectronics, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): Reduces conduction losses.
- Fast Switching: Minimizes switching losses, ideal for high-frequency circuits.
- High-Temperature Operation: Reliable performance up to 175°C.
- Body Diode with Low Reverse Recovery: Enhances efficiency in hard-switching topologies.
Applications include EV chargers, solar inverters, industrial power supplies, and UPS systems. Its TO-247 package ensures robust thermal management.
Advantages over silicon MOSFETs: Higher efficiency, reduced cooling needs, and compact designs.
For detailed specs, refer to the datasheet on ST’s website.
- Low On-Resistance (RDS(on)): Reduces conduction losses.
- Fast Switching: Minimizes switching losses, ideal for high-frequency circuits.
- High-Temperature Operation: Reliable performance up to 175°C.
- Body Diode with Low Reverse Recovery: Enhances efficiency in hard-switching topologies.
Applications include EV chargers, solar inverters, industrial power supplies, and UPS systems. Its TO-247 package ensures robust thermal management.
Advantages over silicon MOSFETs: Higher efficiency, reduced cooling needs, and compact designs.
For detailed specs, refer to the datasheet on ST’s website.
Equivalent
Equivalent products to the STGWA15H120DF2 (15A, 1200V SiC MOSFET) include:
- Infineon IMZA120R030M1H (30mΩ, 1200V)
- ROHM SCT3040KR (40mΩ, 1200V)
- Wolfspeed C3M0015065D (15A, 1200V)
- ON Semiconductor NTH4L015N120SC1 (15A, 1200V)
These alternatives offer similar voltage/current ratings and SiC technology. Check datasheets for exact specs.
- Infineon IMZA120R030M1H (30mΩ, 1200V)
- ROHM SCT3040KR (40mΩ, 1200V)
- Wolfspeed C3M0015065D (15A, 1200V)
- ON Semiconductor NTH4L015N120SC1 (15A, 1200V)
These alternatives offer similar voltage/current ratings and SiC technology. Check datasheets for exact specs.
Features
The STGWA15H120DF2 is a 1200V, 15A IGBT with a diode in a TO-247 package. Key features:
- Low VCE(sat) (1.85V typ.) for reduced conduction losses.
- Fast switching for high-frequency applications.
- High current capability (15A continuous).
- Integrated anti-parallel diode for simplified design.
- Wide operating temperature (-40°C to 175°C).
- Low EMI due to optimized switching behavior.
Ideal for motor drives, inverters, and industrial power systems.
- Low VCE(sat) (1.85V typ.) for reduced conduction losses.
- Fast switching for high-frequency applications.
- High current capability (15A continuous).
- Integrated anti-parallel diode for simplified design.
- Wide operating temperature (-40°C to 175°C).
- Low EMI due to optimized switching behavior.
Ideal for motor drives, inverters, and industrial power systems.
Manufacturer
The STGWA15H120DF2 is manufactured by STMicroelectronics, a leading global semiconductor company.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including power electronics, microcontrollers, sensors, and analog ICs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STGWA15H120DF2 is a 1200V, 15A silicon carbide (SiC) power MOSFET, showcasing STMicroelectronics' expertise in high-performance power devices for energy-efficient applications.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including power electronics, microcontrollers, sensors, and analog ICs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STGWA15H120DF2 is a 1200V, 15A silicon carbide (SiC) power MOSFET, showcasing STMicroelectronics' expertise in high-performance power devices for energy-efficient applications.
Package
The STGWA15H120DF2 is a TO-247-4L (4-lead) package type. This package is designed for high-power applications, offering improved thermal performance and reduced switching losses compared to standard TO-247 packages. The fourth lead (Kelvin emitter) enhances gate control, making it suitable for high-efficiency power modules like IGBTs.
