STGP19NC60KD

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STGP19NC60KD

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IGBT 600V 35A TO-220

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規格

屬性 價值
Series PowerMESH™
Part Status Active
Base Product Number STGP19
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 35 A
Current - Collector Pulsed (Icm) 75 A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
Power - Max 125 W
Switching Energy 165µJ (on), 255µJ (off)
Input Type Standard
Gate Charge 55 nC
Td (on/off) @ 25°C 30ns/105ns
Test Condition 480V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 31 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package TO-220-3
Supplier Device Package TO-220
Packaging Tube

概述

Description

The STGP19NC60KD is a silicon-controlled rectifier (SCR) manufactured by STMicroelectronics. It is designed for use in a variety of power-switching applications. Key features of this device include a blocking voltage of 600 volts and a current rating of 19 amperes, making it suitable for medium-power applications. The SCR is housed in a TO-220 package, which is commonly used for such components, providing a balance between heat dissipation and compact size.
This SCR is primarily used in applications like motor control, light dimmers, pressure control systems, and over-voltage crowbar protection circuits. It is known for its reliable triggering capabilities and thermal stability, which are vital for maintaining consistent performance in fluctuating environmental conditions.
The STGP19NC60KD's design focuses on providing efficient switching capabilities while minimizing power dissipation, making it a cost-effective and reliable choice for engineers and designers working in the fields of industrial automation, consumer electronics, and power management systems.

Equivalent

Equivalent products to the STGP19NC60KD IGBT (Insulated Gate Bipolar Transistor) include:
1. Infineon IKW20N60H3
2. ON Semiconductor FGA25N120ANTD
3. Mitsubishi CM600HA-24H
4. Fairchild FGH20N60SFD
These alternatives offer similar voltage and current ratings, but it's crucial to verify specific parameters like switching speed, package type, and thermal performance to ensure compatibility with your application.

Features

The STGP19NC60KD is an insulated gate bipolar transistor (IGBT) from STMicroelectronics, designed for switching applications. It combines the high-efficiency of a MOSFET with the high-current and low-saturation voltage capability of a bipolar transistor. Key features include:
1. Voltage and Current Ratings: It can handle a collector-emitter voltage (V_CE) of up to 600V and a continuous collector current (I_C) of 19A at 25°C.

2. Low Saturation Voltage: It offers a low collector-emitter saturation voltage (V_CE(sat)) which improves efficiency by reducing conduction losses.
3. Switching Speed: The device features fast switching performance, which reduces energy loss during the transition between the on and off states.
4. Ruggedness: Enhanced ruggedness against short circuits and voltage transients.
5. Thermal Performance: It is designed with good thermal characteristics for effective heat dissipation, ensuring reliability over various operating conditions.
6. Packages: Available in D²PAK package for surface-mounting on printed circuit boards.
This IGBT is suitable for a range of applications, including motor drives, inverters, and power supplies.

Pinout

The STGP19NC60KD is an IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. It typically comes in a TO-220 package, which is a common type of package for such components. The TO-220 package for this IGBT usually features three pins:
1. Collector: This is the main current-carrying terminal. It is the lead through which the current enters the IGBT.

2. Gate: This pin is used to control the IGBT. A voltage applied to the gate controls the conductivity between the collector and emitter.
3. Emitter: This is the terminal through which the current exits the IGBT when it is in the conducting state.
The STGP19NC60KD is designed for high-efficiency and fast switching applications. It is commonly used in power electronics such as motor drives, power supplies, and inverters due to its capability to handle high voltages and currents effectively.

Manufacturer

The STGP19NC60KD is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It serves various sectors, including automotive, industrial, personal electronics, and communications equipment. The company is known for its innovation in microcontrollers, sensors, analog devices, and power management, among others. Headquartered in Geneva, Switzerland, STMicroelectronics operates worldwide and is recognized as one of the leading players in the semiconductor industry.

Application

The STGP19NC60KD is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency and high-speed switching applications. Its primary application areas include:
1. Power Inverters: Used in renewable energy systems like solar inverters.
2. Motor Drives: Effective in controlling the speed and torque of electric motors.
3. Switch-mode Power Supplies (SMPS): Enhances efficiency in power conversion systems.
4. Uninterruptible Power Supplies (UPS): Provides reliable power in backup systems.
5. Industrial Automation: Used in robotic and automated manufacturing systems.
6. HVAC Systems: For controlling heating, ventilation, and air conditioning systems.
These applications benefit from the IGBT’s capabilities, including low power loss and high-frequency operation.

Package

The STGP19NC60KD is an IGBT (Insulated Gate Bipolar Transistor) in a TO-220 package. This package type is known for its three-terminal design, which is commonly used for power semiconductor devices. It offers efficient heat dissipation and is suitable for various applications requiring moderate power levels.

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