規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1Ohm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 18 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 400 pF @ 25 V |
| PowerDissipation(Max) | 96W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
概述
Description
The STD5NM60T4 is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
- 600V Drain-Source Voltage (VDS) – Suitable for medium-high voltage circuits.
- 5A Continuous Drain Current (ID) – Handles moderate power loads.
- Low On-Resistance (RDS(on)) – Typically 1.5Ω (max), reducing conduction losses.
- Fast Switching – Optimized for applications like SMPS, lighting, and motor control.
- Avalanche Rugged – Enhanced reliability under inductive loads.
- TO-252 (DPAK) Package – Compact and thermally efficient.
Ideal for AC-DC converters, inverters, and industrial power systems, the STD5NM60T4 balances performance and cost-effectiveness. Always refer to the datasheet for detailed specifications.
- 600V Drain-Source Voltage (VDS) – Suitable for medium-high voltage circuits.
- 5A Continuous Drain Current (ID) – Handles moderate power loads.
- Low On-Resistance (RDS(on)) – Typically 1.5Ω (max), reducing conduction losses.
- Fast Switching – Optimized for applications like SMPS, lighting, and motor control.
- Avalanche Rugged – Enhanced reliability under inductive loads.
- TO-252 (DPAK) Package – Compact and thermally efficient.
Ideal for AC-DC converters, inverters, and industrial power systems, the STD5NM60T4 balances performance and cost-effectiveness. Always refer to the datasheet for detailed specifications.
Equivalent
Equivalent products to the STD5NM60T4 (600V, 4.5A, N-channel MOSFET) include:
- STP5NM60FD (STMicroelectronics)
- IRF840 (Vishay/Infineon)
- FQP5N60C (Fairchild/ON Semi)
- 5N60 (generic alternatives from various brands)
These offer similar voltage/current ratings. Verify datasheets for exact compatibility in your circuit.
- STP5NM60FD (STMicroelectronics)
- IRF840 (Vishay/Infineon)
- FQP5N60C (Fairchild/ON Semi)
- 5N60 (generic alternatives from various brands)
These offer similar voltage/current ratings. Verify datasheets for exact compatibility in your circuit.
Features
The STD5NM60T4 is an N-channel MOSFET with the following key features:
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Rating: 4.5A continuous drain current (ID).
- Low On-Resistance: 1.5Ω (RDS(on)) max at VGS = 10V.
- Fast Switching: Low gate charge (Qg) and input capacitance for efficient switching.
- Avalanche Rugged: High energy capability for reliability in harsh conditions.
- Package: DPAK (TO-252) for efficient thermal performance.
- Applications: Used in power supplies, motor control, and lighting systems.
This MOSFET is designed for high-voltage, low-power applications with efficient switching performance.
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Rating: 4.5A continuous drain current (ID).
- Low On-Resistance: 1.5Ω (RDS(on)) max at VGS = 10V.
- Fast Switching: Low gate charge (Qg) and input capacitance for efficient switching.
- Avalanche Rugged: High energy capability for reliability in harsh conditions.
- Package: DPAK (TO-252) for efficient thermal performance.
- Applications: Used in power supplies, motor control, and lighting systems.
This MOSFET is designed for high-voltage, low-power applications with efficient switching performance.
Pinout
The STD5NM60T4 is a N-channel MOSFET with 3 pins (TO-252/DPAK package):
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 600V drain-source voltage (VDSS).
- 4.5A continuous drain current (ID).
- Low on-resistance (RDS(on) ~ 1.5Ω).
- Fast switching for power applications (e.g., SMPS, motor control).
Designed for efficiency in high-voltage circuits.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 600V drain-source voltage (VDSS).
- 4.5A continuous drain current (ID).
- Low on-resistance (RDS(on) ~ 1.5Ω).
- Fast switching for power applications (e.g., SMPS, motor control).
Designed for efficiency in high-voltage circuits.
Package
The STD5NM60T4 is a power MOSFET available in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-efficiency applications, and features a tab for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-current circuits. The TO-252 package offers good thermal performance and ease of PCB mounting.
