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STB28N60M2
+物料清單MOSFET N-CH 600V 22A D2PAK
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製造商意法半導體
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製造商部分 #STB28N60M2
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有存貨2035
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規格
| 屬性 | 價值 |
| Series | MDmesh™ II Plus |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1440 pF @ 100 V |
| PowerDissipation(Max) | 170W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D2PAK) |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STB28 |
概述
Description
This MOSFET is suitable for various applications, including switch-mode power supplies, motor drivers, and power management systems. It offers robust thermal performance, with a maximum junction temperature of 150°C, making it ideal for high-reliability designs.
The device features fast switching capabilities, enabling it to operate efficiently in high-frequency applications. It is packaged in a TO-220 format, which facilitates effective heat dissipation. Overall, the STB28N60M2 is a versatile component for engineers looking for reliable, high-performance MOSFET solutions in demanding electrical environments.
Equivalent
Features
- Voltage Rating: Maximum drain-source voltage (V_DS) of 600V.
- Continuous Drain Current: Up to 28A, allowing for effective current handling.
- R_DS(on): Low on-resistance of approximately 0.24Ω at V_GS = 10V, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): Ranges from 2V to 4V, ensuring reliable switching behavior.
- Fast Switching Speed: Suitable for high-frequency applications.
- Thermal Resistance: Low thermal resistance for effective heat dissipation.
- Package: Available in an TO-220 package, facilitating heat management and ease of mounting.
This MOSFET is ideal for applications such as switch mode power supplies (SMPS), industrial motor drives, and power management circuits, providing robustness and high efficiency in demanding environments.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is where the load is connected. Current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It completes the circuit by allowing current to flow back to the source when the MOSFET is conducting.
The STB28N60M2 is designed for applications requiring high voltage and current, making it suitable for use in power supplies, motor drives, and other high-power switching applications.
Manufacturer
Founded in 1987 through the merger of two companies, STMicroelectronics is headquartered in Geneva, Switzerland, and operates in multiple countries worldwide. The company serves a wide range of industries, including automotive, industrial, consumer electronics, and telecommunications, making it a significant player in the semiconductor market.
The STB28N60M2 is a power MOSFET designed for applications requiring high voltage and current handling, often used in power supplies, motor controls, and other areas where efficient energy management is critical. STMicroelectronics focuses on innovation and sustainability, providing solutions that enhance energy efficiency and performance in electronic systems.
Application
1. Switching Power Supplies: Efficiently managing power conversion.
2. Motor Control: Driving DC motors in industrial and consumer applications.
3. Lighting Control: Used in LED drivers and dimmers.
4. Inverters: For renewable energy systems like solar inverters.
5. Class D Amplifiers: For audio amplification.
6. Power Management Circuits: In various electronic devices.
Its high voltage and current ratings make it ideal for these applications.