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SQJ409EP-T2_GE3
+物料清單P-CHANNEL 40-V (D-S) 175C MOSFET
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製造商矽尼克斯
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製造商部分 #SQJ409EP-T2_GE3
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有存貨14221
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規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 7mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 260 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 11000 pF @ 25 V |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
概述
Description
Key features of this MOSFET may include:
1. Technology: Utilizes advanced MOSFET technology for efficient performance.
2. Low On-Resistance: Ensures minimal power loss and efficient power management.
3. High-Speed Switching: Facilitates rapid switching speeds crucial for various electronic applications.
4. Thermal Performance: Designed to operate effectively under various temperature conditions.
5. Applications: Commonly used in power management, load switching, motor drives, and other electronic applications where efficient power control is necessary.
For specific characteristics like voltage, current ratings, and other technical specifications, referring to the datasheet provided by the manufacturer is recommended. Such detailed information is essential for designers and engineers to incorporate these components into their projects effectively.
Equivalent
1. IRF9540N - by Infineon Technologies.
2. FQP27P06 - by ON Semiconductor.
3. SI7461DP - by Vishay Siliconix (another similar option from the same manufacturer).
4. STP80PF55 - by STMicroelectronics.
Ensure to compare specifications like V_DS, I_D, R_DS(on), and package type for compatibility.
Features
1. Type: P-Channel MOSFET.
2. Voltage Rating: It operates with a drain-source voltage (V_DS) of up to -40V.
3. Current Rating: Continuous drain current (I_D) is rated up to -11.5A.
4. R_DS(on): It has a low on-resistance, enhancing efficiency and reducing power losses.
5. Package: Available in a PowerPAK SO-8 package, which offers good thermal performance.
6. Applications: Suitable for DC-DC converters, load switch applications, and power management in computing and other electronic devices.
7. Enhanced Performance: Provides fast switching speeds and is optimized for high-efficiency power delivery.
8. Temperature Range: Typically operates within a wide temperature range, making it suitable for various environmental conditions.
These features make it a versatile choice for electronic designs requiring efficient power management and switching capabilities.
Pinout
The SQJ409EP-T2_GE3 has a total of 8 pins. Here is a brief description of its pin functions:
1. Source (S): Multiple pins serve as the source terminal for the MOSFET. They are typically connected to ground in a circuit.
2. Gate (G): The gate terminal controls the conductivity between the source and drain. It is used to turn the MOSFET on and off.
3. Drain (D): Multiple pins serve as the drain terminal, which is connected to the load or power source.
These pins provide the electrical connections needed for the MOSFET to operate within a circuit, allowing for efficient switching and control of electrical power.