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SQJ138EP-T1_GE3
+物料清單MOSFET N-CH 40V 330A PPAK SO-8
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製造商矽尼克斯
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製造商部分 #SQJ138EP-T1_GE3
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規格
| 屬性 | 價值 |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 330A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4715 pF @ 25 V |
| Power Dissipation (Max) | 312W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SQJ138 |
概述
Description
The SQJ138EP-T1_GE3 is a power MOSFET designed for a variety of applications, including power management and switching. It features a low on-resistance, which enhances efficiency by reducing power loss during operation. This N-channel MOSFET is capable of handling high current and voltage levels, making it suitable for use in switch-mode power supplies, motor drivers, and other high-power devices.
Key specifications typically include a maximum drain-source voltage (V_DS), a continuous drain current (I_D), and a gate threshold voltage (V_GS(th)). The device is packaged in a compact surface-mount format, facilitating easier integration into PCB designs.
The SQJ138EP-T1_GE3 is noted for its reliability and performance in demanding environments, contributing to robust electronic systems. When utilizing this MOSFET, proper thermal management and circuit design are essential to maximize performance and longevity. Always refer to the manufacturer's datasheet for specific electrical characteristics and application guidelines.
Key specifications typically include a maximum drain-source voltage (V_DS), a continuous drain current (I_D), and a gate threshold voltage (V_GS(th)). The device is packaged in a compact surface-mount format, facilitating easier integration into PCB designs.
The SQJ138EP-T1_GE3 is noted for its reliability and performance in demanding environments, contributing to robust electronic systems. When utilizing this MOSFET, proper thermal management and circuit design are essential to maximize performance and longevity. Always refer to the manufacturer's datasheet for specific electrical characteristics and application guidelines.
Equivalent
The SQJ138EP-T1_GE3 is a N-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and 2N7000. When selecting a substitute, ensure compatibility in specifications such as voltage rating, current handling, R_DS(on), and gate threshold voltage. Always verify the specific requirements for your application before replacement.
Features
The SQJ138EP-T1_GE3 is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low to medium voltage applications.
2. Current Capability: The device can handle continuous drain current (Id) of up to 70A at a specified temperature.
3. Low On-Resistance: It offers a low Rds(on) value, typically around 8.5 mΩ, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: The MOSFET supports high-frequency switching, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Management: It features a robust thermal performance with a junction-to-ambient thermal resistance, allowing for effective heat dissipation.
6. Package Type: The device comes in a TO-220 package, facilitating easy mounting and connection in various designs.
Overall, the SQJ138EP-T1_GE3 is suitable for power management applications requiring efficiency and high performance.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low to medium voltage applications.
2. Current Capability: The device can handle continuous drain current (Id) of up to 70A at a specified temperature.
3. Low On-Resistance: It offers a low Rds(on) value, typically around 8.5 mΩ, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: The MOSFET supports high-frequency switching, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Management: It features a robust thermal performance with a junction-to-ambient thermal resistance, allowing for effective heat dissipation.
6. Package Type: The device comes in a TO-220 package, facilitating easy mounting and connection in various designs.
Overall, the SQJ138EP-T1_GE3 is suitable for power management applications requiring efficiency and high performance.
Pinout
The SQJ138EP-T1_GE3 is a N-channel MOSFET with a pin count of 8. It is designed for high-efficiency power applications. The pin configuration and their functions are as follows:
1. Gate (G): The control pin for turning the MOSFET on and off.
2. Drain (D): The output pin where the load is connected.
3. Source (S): The reference pin, typically connected to ground in low-side switching applications.
4. Body Diode Connections: Internal body diodes allow current to flow from the drain to the source when the MOSFET is off.
The SQJ138EP-T1_GE3 features low on-resistance, fast switching capabilities, and is suitable for applications such as power management, lighting, and motor control. Its robust design allows for efficient performance in various electronic circuits.
1. Gate (G): The control pin for turning the MOSFET on and off.
2. Drain (D): The output pin where the load is connected.
3. Source (S): The reference pin, typically connected to ground in low-side switching applications.
4. Body Diode Connections: Internal body diodes allow current to flow from the drain to the source when the MOSFET is off.
The SQJ138EP-T1_GE3 features low on-resistance, fast switching capabilities, and is suitable for applications such as power management, lighting, and motor control. Its robust design allows for efficient performance in various electronic circuits.
Manufacturer
The SQJ138EP-T1_GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including MOSFETs, diodes, resistors, capacitors, inductors, and more. Founded in 1962, Vishay has established itself as a key player in the electronics industry, serving diverse markets such as automotive, industrial, telecommunications, consumer electronics, and military applications.
Vishay's products are known for their high reliability and performance, catering to both standard and specialized applications. The company operates manufacturing facilities around the world and emphasizes innovation through research and development. Vishay Intertechnology is also recognized for its commitment to quality and sustainability, adhering to international standards in its production processes. As a major supplier in the electronics components market, Vishay plays a significant role in enabling modern electronic devices and systems.
Vishay's products are known for their high reliability and performance, catering to both standard and specialized applications. The company operates manufacturing facilities around the world and emphasizes innovation through research and development. Vishay Intertechnology is also recognized for its commitment to quality and sustainability, adhering to international standards in its production processes. As a major supplier in the electronics components market, Vishay plays a significant role in enabling modern electronic devices and systems.
Application
The SQJ138EP-T1_GE3 is a N-channel MOSFET primarily used in power management applications. Its areas of application include:
1. DC-DC Converters: Used in switching power supply designs for efficient voltage regulation.
2. Power Switching: Ideal for high-efficiency switching in various electronic devices.
3. Load Switching: Suitable for controlling motors, lights, and other loads in consumer electronics.
4. Battery Management Systems: Utilized in managing charging and discharging processes in battery-operated devices.
5. Telecommunications: Employed in RF amplifiers and signal processing.
Overall, its low on-resistance and high-speed switching capabilities make it versatile for various power control applications.
1. DC-DC Converters: Used in switching power supply designs for efficient voltage regulation.
2. Power Switching: Ideal for high-efficiency switching in various electronic devices.
3. Load Switching: Suitable for controlling motors, lights, and other loads in consumer electronics.
4. Battery Management Systems: Utilized in managing charging and discharging processes in battery-operated devices.
5. Telecommunications: Employed in RF amplifiers and signal processing.
Overall, its low on-resistance and high-speed switching capabilities make it versatile for various power control applications.
Package
The SQJ138EP-T1_GE3 is packaged in a TO-220 package type. This package is commonly used for power transistors and provides efficient thermal management and easy mounting on heatsinks.
