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規格
| 屬性 | 價值 |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C3 |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Part # Aliases | SP000315410 SPD04N80C3BTMA1 |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 800 V |
| Id - Continuous Drain Current | 4 A |
| Rds On | 1.1 Ohms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 31 nC |
| Pd - Power Dissipation | 63 W |
| Channel Mode | Enhancement |
| Fall Time | 12 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 72 ns |
| Typical Turn - On Delay Time | 25 ns |
概述
Description
The SPD04N80C3 is a high-voltage, N-channel power MOSFET designed for various applications in power electronics. It features a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage switching applications. With a maximum continuous drain current (ID) of 4A, it can effectively manage power dissipation in circuits.
This MOSFET offers low on-resistance (RDS(on)), which reduces energy losses during operation and improves efficiency. It is typically used in power supply circuits, motor drives, and other industrial applications where high voltage and efficiency are crucial.
The SPD04N80C3 is housed in a TO-220 package, allowing for effective heat dissipation, and is compatible with standard assembly techniques. Its fast switching capabilities make it suitable for both linear and switching applications. Overall, the SPD04N80C3 is an essential component for engineers looking to design reliable and efficient power electronic systems.
This MOSFET offers low on-resistance (RDS(on)), which reduces energy losses during operation and improves efficiency. It is typically used in power supply circuits, motor drives, and other industrial applications where high voltage and efficiency are crucial.
The SPD04N80C3 is housed in a TO-220 package, allowing for effective heat dissipation, and is compatible with standard assembly techniques. Its fast switching capabilities make it suitable for both linear and switching applications. Overall, the SPD04N80C3 is an essential component for engineers looking to design reliable and efficient power electronic systems.
Equivalent
The SPD04N80C3 is an N-channel MOSFET with a 800V, 4A rating. Equivalent products include the STP4NB80, IRF840, and MTP4N80. Always verify specifications such as V_DS, I_D, R_DS(on), and package type when considering alternatives to ensure compatibility with your application.
Features
The SPD04N80C3 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: Can handle continuous drain current (Id) up to 4A, allowing it to be used in various power applications.
3. Rds(on): Low on-resistance (typically around 0.5 ohms at Vgs = 10V), which minimizes power loss during operation.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, enabling efficient switching.
5. Fast Switching Speeds: Designed for rapid switching, enhancing performance in power management circuits.
6. Package Type: Available in TO-220 package, facilitating effective heat dissipation.
7. Applications: Commonly used in power supplies, inverters, and motor drives.
These characteristics make the SPD04N80C3 an ideal choice for various high-voltage and power electronics applications.
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: Can handle continuous drain current (Id) up to 4A, allowing it to be used in various power applications.
3. Rds(on): Low on-resistance (typically around 0.5 ohms at Vgs = 10V), which minimizes power loss during operation.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, enabling efficient switching.
5. Fast Switching Speeds: Designed for rapid switching, enhancing performance in power management circuits.
6. Package Type: Available in TO-220 package, facilitating effective heat dissipation.
7. Applications: Commonly used in power supplies, inverters, and motor drives.
These characteristics make the SPD04N80C3 an ideal choice for various high-voltage and power electronics applications.
Pinout
The SPD04N80C3 is an N-channel power MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This is the control terminal for the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This terminal is connected to the load and carries the current when the device is activated.
3. Source (S): This terminal is connected to the ground (or negative side of the power supply), serving as the return path for the current flowing through the load.
The SPD04N80C3 is designed for high-voltage applications, with a maximum drain-source voltage of 800V and a continuous drain current rating of 4A. It operates efficiently in switching applications, making it suitable for power supplies, motor control, and other electronic circuits.
1. Gate (G): This is the control terminal for the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This terminal is connected to the load and carries the current when the device is activated.
3. Source (S): This terminal is connected to the ground (or negative side of the power supply), serving as the return path for the current flowing through the load.
The SPD04N80C3 is designed for high-voltage applications, with a maximum drain-source voltage of 800V and a continuous drain current rating of 4A. It operates efficiently in switching applications, making it suitable for power supplies, motor control, and other electronic circuits.
Manufacturer
The SPD04N80C3 is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. STMicroelectronics specializes in a wide range of products, including microcontrollers, power management ICs, sensors, and discrete components such as power MOSFETs, like the SPD04N80C3. The company is known for its focus on innovation and sustainability in electronics, catering to various industries including automotive, industrial, consumer electronics, and communication. STMicroelectronics plays a significant role in the development of technologies for smart devices and IoT applications, contributing to advancements in energy efficiency and connectivity.
Application
The SPD04N80C3 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Used in DC-DC converters and inverters for efficient power regulation.
2. Motor Control: Employed in driving electric motors, particularly in variable-speed applications.
3. Lighting: Utilized in LED drivers and dimming circuits.
4. Industrial Equipment: Found in welding machines and other heavy-duty industrial applications.
5. Consumer Electronics: Implemented in devices requiring efficient power management.
Its high voltage rating and low on-resistance make it suitable for these varied applications.
1. Switching Power Supplies: Used in DC-DC converters and inverters for efficient power regulation.
2. Motor Control: Employed in driving electric motors, particularly in variable-speed applications.
3. Lighting: Utilized in LED drivers and dimming circuits.
4. Industrial Equipment: Found in welding machines and other heavy-duty industrial applications.
5. Consumer Electronics: Implemented in devices requiring efficient power management.
Its high voltage rating and low on-resistance make it suitable for these varied applications.
Package
The SPD04N80C3 is typically packaged in a TO-220 format, which is a commonly used package for power semiconductor devices. This package allows for efficient heat dissipation and is suitable for applications requiring higher power handling.