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規格
| 屬性 | 價值 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 1000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 20.7 A |
| Rds On | 190 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 87 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 208 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 4.5 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 5 ns |
| Series | CoolMOS C3 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 67 ns |
| Typical Turn - On Delay Time | 10 ns |
| Width | 9.25 mm |
| Part # Aliases | SP000013520 SPB2N6C3XT SPB20N60C3ATMA1 |
| Unit Weight | 0.139332 oz |
概述
Description
The SPB20N60C3 is a high-power N-channel MOSFET designed for industrial and automotive applications. With a maximum drain-source voltage of 600V and a continuous drain current of 20A, it is suitable for high-voltage switching applications. This MOSFET features low on-resistance (RDS(on)) and fast switching capabilities, which enhance efficiency in power conversion and management systems.
Key specifications include a gate threshold voltage of 2-4V, a maximum pulsed drain current of 60A, and a total gate charge of 45nC. It is packaged in a TO-220 format, allowing for effective heat dissipation and easy mounting on PCBs.
The SPB20N60C3 is commonly used in applications such as switch-mode power supplies, motor drives, and inverters, where reliable performance and thermal management are crucial. Overall, it is an excellent choice for engineers looking to design efficient and robust power electronics solutions.
Key specifications include a gate threshold voltage of 2-4V, a maximum pulsed drain current of 60A, and a total gate charge of 45nC. It is packaged in a TO-220 format, allowing for effective heat dissipation and easy mounting on PCBs.
The SPB20N60C3 is commonly used in applications such as switch-mode power supplies, motor drives, and inverters, where reliable performance and thermal management are crucial. Overall, it is an excellent choice for engineers looking to design efficient and robust power electronics solutions.
Equivalent
The SPB20N60C3 is a N-channel MOSFET commonly used in power applications. Equivalent products include the STP20NM60, IRFBC30, and FQP20N60. Ensure to check specifications like voltage, current, and RDS(on) for compatibility in specific applications.
Features
The SPB20N60C3 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle drain-source voltages up to 600V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current of up to 20A, allowing for robust performance in power management.
3. RDS(on): It offers low on-resistance (typically around 0.25 ohms), which reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage is in the range of 2 to 4V, facilitating easy drive with standard gate drivers.
5. Thermal Resistance: It features low thermal resistance, ensuring efficient heat dissipation.
6. Package Type: The device is typically available in a TO-220 package, providing ease of mounting and heat management.
7. Applications: Commonly used in switch mode power supplies, motor control, and other high-power applications.
These features make the SPB20N60C3 a reliable choice for power electronics.
1. Voltage Rating: It can handle drain-source voltages up to 600V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current of up to 20A, allowing for robust performance in power management.
3. RDS(on): It offers low on-resistance (typically around 0.25 ohms), which reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage is in the range of 2 to 4V, facilitating easy drive with standard gate drivers.
5. Thermal Resistance: It features low thermal resistance, ensuring efficient heat dissipation.
6. Package Type: The device is typically available in a TO-220 package, providing ease of mounting and heat management.
7. Applications: Commonly used in switch mode power supplies, motor control, and other high-power applications.
These features make the SPB20N60C3 a reliable choice for power electronics.
Pinout
The SPB20N60C3 is a N-channel MOSFET with a total of 3 pins. Its primary functions include switching and amplification in power applications. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on (conduct) or off (not conduct).
2. Drain (D): This is the output pin where the current flows out when the MOSFET is on. It connects to the load.
3. Source (S): This pin serves as the input for the current coming from the load or ground reference. It is typically connected to the ground in low-side switching applications.
The SPB20N60C3 is designed to handle high voltage (up to 600V) and current (20A), making it suitable for use in various power management applications such as inverters, converters, and motor drives.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on (conduct) or off (not conduct).
2. Drain (D): This is the output pin where the current flows out when the MOSFET is on. It connects to the load.
3. Source (S): This pin serves as the input for the current coming from the load or ground reference. It is typically connected to the ground in low-side switching applications.
The SPB20N60C3 is designed to handle high voltage (up to 600V) and current (20A), making it suitable for use in various power management applications such as inverters, converters, and motor drives.
Manufacturer
The SPB20N60C3 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components, focusing on providing high-quality and reliable semiconductor solutions. Established as a spin-off from NXP Semiconductors in 2017, Nexperia has a strong emphasis on efficiency and performance in its product offerings. The company serves various industries, including automotive, industrial, and consumer electronics, offering a wide range of products for diverse applications. With a commitment to innovation and sustainability, Nexperia operates multiple manufacturing facilities worldwide, ensuring a robust supply chain and high standards of quality control.
Application
The SPB20N60C3 is a high-voltage N-channel MOSFET primarily used in various applications requiring efficient power management. Key application areas include:
1. Switching Power Supplies - For efficient voltage regulation.
2. Motor Drives - In industrial and automotive applications for controlling electric motors.
3. Inverters - For renewable energy systems like solar inverters.
4. Lighting Control - In LED drivers and dimmers.
5. HVAC Systems - For controlling compressors and fans.
6. Power Electronics - In converters and amplifiers.
Its high voltage rating and low on-resistance make it suitable for demanding power applications.
1. Switching Power Supplies - For efficient voltage regulation.
2. Motor Drives - In industrial and automotive applications for controlling electric motors.
3. Inverters - For renewable energy systems like solar inverters.
4. Lighting Control - In LED drivers and dimmers.
5. HVAC Systems - For controlling compressors and fans.
6. Power Electronics - In converters and amplifiers.
Its high voltage rating and low on-resistance make it suitable for demanding power applications.
Package
The SPB20N60C3 is packaged in a TO-220 format. This package type features a metal tab for heat dissipation, making it suitable for high-power applications.