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SPA11N60C3
+物料清單POWER FIELD-EFFECT TRANSISTOR, 1
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製造商英飛淩科技
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製造商部分 #SPA11N60C3
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有存貨4527
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規格
| 屬性 | 價值 |
| Package / Case | Bulk |
| Part Status | Active |
概述
Description
The SPA11N60C3 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 600V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.38Ω (max)
- Fast Switching: Optimized for efficiency in power supplies, motor drives, and inverters.
- Robust Design: Avalanche energy rated for reliability in harsh conditions.
It is commonly used in SMPS (Switched-Mode Power Supplies), lighting systems, and industrial power converters. The TO-220F package ensures good thermal performance.
For detailed specs, refer to the datasheet.
- Voltage Rating: 600V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.38Ω (max)
- Fast Switching: Optimized for efficiency in power supplies, motor drives, and inverters.
- Robust Design: Avalanche energy rated for reliability in harsh conditions.
It is commonly used in SMPS (Switched-Mode Power Supplies), lighting systems, and industrial power converters. The TO-220F package ensures good thermal performance.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the SPA11N60C3 (11A, 600V MOSFET) include:
- IRFB11N60A (Infineon)
- STP11NK60ZFP (STMicroelectronics)
- FQP11N60C (Fairchild/ON Semiconductor)
- IPP11N60N (Infineon)
These are similar N-channel 600V MOSFETs with comparable current ratings (around 11A). Verify specs like gate charge and RDS(on) for exact suitability.
- IRFB11N60A (Infineon)
- STP11NK60ZFP (STMicroelectronics)
- FQP11N60C (Fairchild/ON Semiconductor)
- IPP11N60N (Infineon)
These are similar N-channel 600V MOSFETs with comparable current ratings (around 11A). Verify specs like gate charge and RDS(on) for exact suitability.
Features
The SPA11N60C3 is a 600V, 11A N-channel Power MOSFET with key features:
- Low On-Resistance (RDS(on)): 0.38Ω (typ) @ 10V, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency power applications.
- Low Gate Charge (Qg): Enhances switching performance.
- Avalanche Energy Rated: Improves reliability in rugged conditions.
- Low Reverse Recovery Charge (Qrr): Minimizes switching losses in hard-switching circuits.
- TO-220F Package: Compact, cost-effective, and suitable for high-power designs.
Ideal for SMPS, motor drives, and inverters where efficiency and robustness are critical.
- Low On-Resistance (RDS(on)): 0.38Ω (typ) @ 10V, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency power applications.
- Low Gate Charge (Qg): Enhances switching performance.
- Avalanche Energy Rated: Improves reliability in rugged conditions.
- Low Reverse Recovery Charge (Qrr): Minimizes switching losses in hard-switching circuits.
- TO-220F Package: Compact, cost-effective, and suitable for high-power designs.
Ideal for SMPS, motor drives, and inverters where efficiency and robustness are critical.
Package
The SPA11N60C3 is a power MOSFET in a TO-220F package. This package type is lead-free, halogen-free, and RoHS-compliant, featuring a fully molded plastic body with three leads. It is designed for high-efficiency power switching applications, offering good thermal performance and ease of mounting. The TO-220F is a common through-hole package for medium-power devices.
