圖片僅供參考
規格
| 屬性 | 價值 |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C3 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | SPA8N8C3XK SP000216310 SPA08N80C3XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 800 V |
| Id - Continuous Drain Current | 8 A |
| Rds On | 560 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 45 nC |
| Pd - Power Dissipation | 40 W |
| Channel Mode | Enhancement |
| Fall Time | 10 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 72 ns |
| Typical Turn - On Delay Time | 25 ns |
概述
Description
The SPA08N80C3 is a high-voltage N-channel MOSFET designed for power applications, particularly in switching and amplification circuits. With a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) rating of 8A, it is suitable for use in high-voltage environments. The device features a low on-resistance (Rds(on)), which minimizes power losses and improves efficiency in applications such as power supplies, industrial automation, and motor control.
The SPA08N80C3 has a gate threshold voltage (Vgs(th)) that ensures reliable switching at standard logic levels, making it compatible with various control circuits. Its robust construction and thermal performance allow it to operate effectively in demanding conditions. Additionally, the MOSFET is packaged in a TO-220 format, facilitating easy heat dissipation and mounting.
Overall, the SPA08N80C3 is a versatile component ideal for engineers looking to implement high-voltage solutions in their designs.
The SPA08N80C3 has a gate threshold voltage (Vgs(th)) that ensures reliable switching at standard logic levels, making it compatible with various control circuits. Its robust construction and thermal performance allow it to operate effectively in demanding conditions. Additionally, the MOSFET is packaged in a TO-220 format, facilitating easy heat dissipation and mounting.
Overall, the SPA08N80C3 is a versatile component ideal for engineers looking to implement high-voltage solutions in their designs.
Equivalent
The SPA08N80C3 is a N-channel MOSFET with a 800V drain-source voltage rating and a 8A continuous current rating. Equivalent products include the STP8NK80Z, IRF840, and MOC8023. Always confirm specifications like VDS, ID, RDS(on), and package type when selecting alternatives to ensure compatibility with your application.
Features
The SPA08N80C3 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: It supports a continuous drain current (I_D) of up to 8A, allowing it to handle substantial loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, which reduces power loss and improves efficiency during operation.
4. Fast Switching: The device offers fast switching speeds, enhancing performance in PWM and switching applications.
5. Package Type: It comes in a TO-220 package, providing ease of heat dissipation and mounting.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, ensuring compatibility with low-voltage control signals.
These attributes make the SPA08N80C3 suitable for applications in power supplies, motor control, and high-voltage switching.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: It supports a continuous drain current (I_D) of up to 8A, allowing it to handle substantial loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, which reduces power loss and improves efficiency during operation.
4. Fast Switching: The device offers fast switching speeds, enhancing performance in PWM and switching applications.
5. Package Type: It comes in a TO-220 package, providing ease of heat dissipation and mounting.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, ensuring compatibility with low-voltage control signals.
These attributes make the SPA08N80C3 suitable for applications in power supplies, motor control, and high-voltage switching.
Pinout
The SPA08N80C3 is an N-channel MOSFET known for its high voltage and current handling capabilities. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to conduct between the drain and source.
2. Drain (D): This is the terminal through which the main current flows when the device is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
The SPA08N80C3 is widely used in power applications, such as switching regulators and motor drivers, due to its ability to handle high voltages up to 800V and continuous drain current of up to 8A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to conduct between the drain and source.
2. Drain (D): This is the terminal through which the main current flows when the device is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
The SPA08N80C3 is widely used in power applications, such as switching regulators and motor drivers, due to its ability to handle high voltages up to 800V and continuous drain current of up to 8A.
Manufacturer
The SPA08N80C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices. The company serves various sectors, including automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovation in technology and its commitment to sustainability, providing products that enhance energy efficiency and performance. With a strong emphasis on research and development, STMicroelectronics plays a critical role in the advancement of electronic components and systems used in modern applications.
Application
The SPA08N80C3 is an N-channel MOSFET primarily used in high-voltage applications. Its key application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Used in driving motors in industrial and automotive applications.
3. Lighting Control: Utilized in LED drivers and dimming circuits.
4. Inverters: Employed in renewable energy systems, such as solar inverters.
5. Heating Applications: Used in solid-state relays and heating control systems.
Its high voltage and current ratings make it suitable for various power management tasks in electronic circuits.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Used in driving motors in industrial and automotive applications.
3. Lighting Control: Utilized in LED drivers and dimming circuits.
4. Inverters: Employed in renewable energy systems, such as solar inverters.
5. Heating Applications: Used in solid-state relays and heating control systems.
Its high voltage and current ratings make it suitable for various power management tasks in electronic circuits.
Package
The SPA08N80C3 is typically available in a TO-220 package. This type of package features three leads and is designed for efficient heat dissipation, making it suitable for high-power applications.