圖片僅供參考
SISS73DN-T1-GE3
+物料清單MOSFET P-CH 150V 4.4A/16.2A PPAK
-
製造商矽尼克斯
-
製造商部分 #SISS73DN-T1-GE3
-
有存貨5748
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 4.4A (Ta), 16.2A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 125mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 719 pF @ 75 V |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
概述
Description
The term "SISS73DN-T1-GE3" does not correspond to any widely recognized product, concept, or standard as of my last update. It might be a model number, a part identifier, or a code specific to a certain industry or company, such as electronics, machinery, or software. If this is related to a specific product or system, you would typically find an "Introduction" in the product documentation, which would provide an overview of its features, functionalities, use cases, and technical specifications. For a concise summary, it would be most helpful to refer directly to the manufacturer's resources or official documentation related to the identifier for precise and relevant information. If possible, please provide more context or specific details about its application or industry for a more tailored explanation.
Equivalent
The SISS73DN-T1-GE3 is a MOSFET produced by Vishay. Equivalent products are typically from other manufacturers offering similar specifications. Consider these alternatives:
1. NXP's BUK9Y12-60E
2. ON Semiconductor's NTMFS4935N
3. Infineon's BSC123N08NS5
4. Toshiba's TPHR8504PL
Ensure to verify the specifications such as voltage, current, and package to confirm compatibility for your specific application.
1. NXP's BUK9Y12-60E
2. ON Semiconductor's NTMFS4935N
3. Infineon's BSC123N08NS5
4. Toshiba's TPHR8504PL
Ensure to verify the specifications such as voltage, current, and package to confirm compatibility for your specific application.
Features
The SISS73DN-T1-GE3 is a power MOSFET designed for efficient switching applications. Key features include:
1. Low On-Resistance: It offers a low RDS(on), which minimizes conduction losses and improves efficiency.
2. Compact Package: Available in a small SOT-23 package, it is ideal for space-constrained designs.
3. High-Speed Switching: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. Low Gate Charge: Features a low gate charge, reducing the power requirement for switching.
5. Robust Performance: Ensures reliability and stability across a range of operating conditions.
6. Thermal Efficiency: Designed to handle thermal stress efficiently, which enhances device longevity.
7. Voltage Range: Supports a wide range of operating voltages, suitable for various applications.
8. Application Versatility: Commonly used in DC-DC converters, load switching, and power management systems.
These features make the SISS73DN-T1-GE3 suitable for use in portable electronics, automotive systems, and other applications requiring efficient power management.
1. Low On-Resistance: It offers a low RDS(on), which minimizes conduction losses and improves efficiency.
2. Compact Package: Available in a small SOT-23 package, it is ideal for space-constrained designs.
3. High-Speed Switching: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. Low Gate Charge: Features a low gate charge, reducing the power requirement for switching.
5. Robust Performance: Ensures reliability and stability across a range of operating conditions.
6. Thermal Efficiency: Designed to handle thermal stress efficiently, which enhances device longevity.
7. Voltage Range: Supports a wide range of operating voltages, suitable for various applications.
8. Application Versatility: Commonly used in DC-DC converters, load switching, and power management systems.
These features make the SISS73DN-T1-GE3 suitable for use in portable electronics, automotive systems, and other applications requiring efficient power management.
Pinout
The SISS73DN-T1-GE3 is a MOSFET transistor designed for use in power management applications. It is manufactured by Vishay Siliconix. This component is a dual N-channel MOSFET housed in a PowerPAK® SO-8 package, which is known for its compact size and efficient thermal performance.
The key specifications of the SISS73DN-T1-GE3 are as follows:
- Pin Count: The device has 8 pins. In the PowerPAK® SO-8 package, these pins are typically configured for efficient electrical connections and heat dissipation.
- Function: The dual N-channel configuration allows for two MOSFETs to be integrated into a single package, providing high performance for switching applications. This is particularly useful in applications like DC-DC converters, synchronous rectification, and other power-related circuits.
For precise pin configuration and detailed electrical characteristics, consulting the datasheet from the manufacturer is recommended.
The key specifications of the SISS73DN-T1-GE3 are as follows:
- Pin Count: The device has 8 pins. In the PowerPAK® SO-8 package, these pins are typically configured for efficient electrical connections and heat dissipation.
- Function: The dual N-channel configuration allows for two MOSFETs to be integrated into a single package, providing high performance for switching applications. This is particularly useful in applications like DC-DC converters, synchronous rectification, and other power-related circuits.
For precise pin configuration and detailed electrical characteristics, consulting the datasheet from the manufacturer is recommended.
Manufacturer
The SISS73DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for producing a wide array of electronic components, including semiconductors and passive components. Founded in 1962 by Dr. Felix Zandman, the company has grown through numerous acquisitions, becoming one of the largest manufacturers in its sector.
Vishay's product range includes resistors, capacitors, inductors, diodes, and transistors, among other components. The company serves various industries such as automotive, industrial, consumer, telecommunications, military, aerospace, and medical markets. Vishay is headquartered in Malvern, Pennsylvania, USA, and operates production facilities and offices worldwide.
By focusing on innovation, quality, and reliability, Vishay has established itself as a key player in the electronics manufacturing industry. Its components are integral to the functioning of many electronic devices and systems, making the company essential to the supply chains of numerous technology companies.
Vishay's product range includes resistors, capacitors, inductors, diodes, and transistors, among other components. The company serves various industries such as automotive, industrial, consumer, telecommunications, military, aerospace, and medical markets. Vishay is headquartered in Malvern, Pennsylvania, USA, and operates production facilities and offices worldwide.
By focusing on innovation, quality, and reliability, Vishay has established itself as a key player in the electronics manufacturing industry. Its components are integral to the functioning of many electronic devices and systems, making the company essential to the supply chains of numerous technology companies.
Application
The SISS73DN-T1-GE3 is a dual N-channel MOSFET primarily used in applications requiring efficient power management. Key application areas include:
1. DC-DC Conversion: Utilized in switching regulators and power management circuits for efficient voltage conversion.
2. Load Switching: Applied in systems that require reliable and fast switching of loads, such as in battery-powered devices.
3. Motor Control: Used in controlling motors in automotive and industrial applications due to its capability to handle high currents.
4. Battery Protection: Integrated into battery management systems for overcurrent and short-circuit protection.
5. Consumer Electronics: Employed in devices like laptops and smartphones for power regulation.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.
1. DC-DC Conversion: Utilized in switching regulators and power management circuits for efficient voltage conversion.
2. Load Switching: Applied in systems that require reliable and fast switching of loads, such as in battery-powered devices.
3. Motor Control: Used in controlling motors in automotive and industrial applications due to its capability to handle high currents.
4. Battery Protection: Integrated into battery management systems for overcurrent and short-circuit protection.
5. Consumer Electronics: Employed in devices like laptops and smartphones for power regulation.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.
Package
The SISS73DN-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a package type of SOT-23. SOT-23 is a small outline transistor package commonly used for surface-mount devices.
