規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 8A |
| Rds On(Max) @ Id Vgs | 18mOhm @ 8.3A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 33nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1200pF @ 10V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The SI9926CDY-T1-GE3 is a dual N-channel MOSFET designed for use in various electronic applications. Manufactured by Vishay Siliconix, this component is part of their TrenchFET Gen III family, known for high efficiency and low on-resistance. The device features two MOSFETs in a single SO-8 package, making it compact and suitable for space-constrained applications.
Key characteristics include a drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of 6.5A, with an R_DS(on) as low as 8.5 mΩ, which minimizes power loss and heat generation. Its low gate charge ensures efficient switching, making it ideal for DC-DC converters, load switch applications, and power management systems.
The SI9926CDY-T1-GE3 operates effectively in a wide temperature range and is RoHS-compliant, ensuring environmental safety. It is widely used in consumer electronics, telecommunications, and industrial systems where efficient power management is crucial.
Key characteristics include a drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of 6.5A, with an R_DS(on) as low as 8.5 mΩ, which minimizes power loss and heat generation. Its low gate charge ensures efficient switching, making it ideal for DC-DC converters, load switch applications, and power management systems.
The SI9926CDY-T1-GE3 operates effectively in a wide temperature range and is RoHS-compliant, ensuring environmental safety. It is widely used in consumer electronics, telecommunications, and industrial systems where efficient power management is crucial.
Equivalent
The SI9926CDY-T1-GE3 is a dual N-channel MOSFET. Equivalent products from other manufacturers may include:
1. IRF7313 from Infineon (formerly International Rectifier)
2. BSC0925NDI from Infineon
3. NTMFS4935NT1G from ON Semiconductor
4. FDW2520C from onsemi
5. AO4800 from Alpha & Omega Semiconductor
When selecting equivalents, ensure the specifications such as voltage, current, Rds(on), and package type match your application requirements.
1. IRF7313 from Infineon (formerly International Rectifier)
2. BSC0925NDI from Infineon
3. NTMFS4935NT1G from ON Semiconductor
4. FDW2520C from onsemi
5. AO4800 from Alpha & Omega Semiconductor
When selecting equivalents, ensure the specifications such as voltage, current, Rds(on), and package type match your application requirements.
Features
The SI9926CDY-T1-GE3 is a dual N-channel MOSFET designed for use in various electronic applications. Key features include:
1. Dual N-Channel Configuration: It offers two N-channel MOSFETs in a single package, which helps save space on circuit boards and is ideal for applications requiring multiple switch operations.
2. Low On-Resistance: The device features low on-state resistance, improving efficiency by reducing power loss during operation.
3. High-Side and Low-Side Switching: Suitable for use as both high-side and low-side switches, providing design flexibility in power management applications.
4. Compact Package: Encased in a compact, surface-mount SO-8 package, allowing for use in space-constrained applications.
5. Efficient Thermal Performance: Its design supports efficient heat dissipation, enabling reliable performance even at higher power levels.
6. Wide Range of Applications: Commonly used in DC-DC converters, power management, load switching, and other electronic circuits requiring high-speed switching.
These features make the SI9926CDY-T1-GE3 a versatile component for designers looking to optimize power efficiency and save space in electronic designs.
1. Dual N-Channel Configuration: It offers two N-channel MOSFETs in a single package, which helps save space on circuit boards and is ideal for applications requiring multiple switch operations.
2. Low On-Resistance: The device features low on-state resistance, improving efficiency by reducing power loss during operation.
3. High-Side and Low-Side Switching: Suitable for use as both high-side and low-side switches, providing design flexibility in power management applications.
4. Compact Package: Encased in a compact, surface-mount SO-8 package, allowing for use in space-constrained applications.
5. Efficient Thermal Performance: Its design supports efficient heat dissipation, enabling reliable performance even at higher power levels.
6. Wide Range of Applications: Commonly used in DC-DC converters, power management, load switching, and other electronic circuits requiring high-speed switching.
These features make the SI9926CDY-T1-GE3 a versatile component for designers looking to optimize power efficiency and save space in electronic designs.
Pinout
The SI9926CDY-T1-GE3 is a dual N-channel MOSFET, commonly used for switching applications. It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pin configuration is as follows:
1. Source 1 (S1): Source terminal for MOSFET 1.
2. Gate 1 (G1): Gate terminal for MOSFET 1.
3. Drain 2 (D2): Drain terminal for MOSFET 2.
4. Source 2 (S2): Source terminal for MOSFET 2.
5. Gate 2 (G2): Gate terminal for MOSFET 2.
6. Drain 1 (D1): Drain terminal for MOSFET 1.
7. Drain 1 (D1): Another connection to Drain 1 for MOSFET 1.
8. Drain 2 (D2): Another connection to Drain 2 for MOSFET 2.
This MOSFET is typically used for load switching and power management applications due to its low on-resistance and capable current handling. It allows efficient control of two independent loads or the configuration of a half-bridge circuit for motor control and other applications requiring dual MOSFETs.
1. Source 1 (S1): Source terminal for MOSFET 1.
2. Gate 1 (G1): Gate terminal for MOSFET 1.
3. Drain 2 (D2): Drain terminal for MOSFET 2.
4. Source 2 (S2): Source terminal for MOSFET 2.
5. Gate 2 (G2): Gate terminal for MOSFET 2.
6. Drain 1 (D1): Drain terminal for MOSFET 1.
7. Drain 1 (D1): Another connection to Drain 1 for MOSFET 1.
8. Drain 2 (D2): Another connection to Drain 2 for MOSFET 2.
This MOSFET is typically used for load switching and power management applications due to its low on-resistance and capable current handling. It allows efficient control of two independent loads or the configuration of a half-bridge circuit for motor control and other applications requiring dual MOSFETs.
Manufacturer
The SI9926CDY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for its production of discrete semiconductors and passive electronic components. They serve a wide array of industries, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Founded in 1962, Vishay has grown through numerous acquisitions and expansions to become a major player in the electronic components industry.
Application
The SI9926CDY-T1-GE3 is a dual N-channel MOSFET designed for use in various electronic applications. It is commonly applied in power management, load switching, and DC-DC conversion circuits. Its features make it suitable for applications in consumer electronics, computing, telecommunications, and automotive systems. The device can be used in battery-powered devices, voltage regulation modules, and motor control circuits due to its low on-resistance and high efficiency, which help to minimize power loss and improve the performance of electronic systems.
Package
The SI9926CDY-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, typically housed in an SO-8 package. This surface-mount package is compact and suitable for space-constrained applications, offering efficient thermal performance and ease of integration in circuit designs.
